LDMOS功率器件在T/R组件中工程化应用研究  

Research on Mass Application of LDMOS in T /R Module

作　　者：陈兆国[1] 郑艺媛[2] 孔令华[1] 徐欣欢[1] 何伟[1] 

机构地区：[1]南京电子技术研究所,南京210039 [2]南京理工大学电子工程与光电技术学院,南京210094

出　　处：《现代雷达》2013年第7期59-60,66,共3页Modern Radar

摘　　要：LDMOS微波功率器件与Si双极器件相比具有输出功率大、效率高、带宽宽等特点,在军用雷达电子系统中的广泛应用也是大势所趋,与其传统应用的区别是射频脉冲工作及饱和区工作。为了实现LDMOS的大规模工程化应用,必须通过调试解决LDMOS在C类或AB类工作条件下的一致性问题,电路设计时带外抑制信号增益,通过减小感应电动势提高器件使用可靠性等设计手段实现该器件的雷达工程应用。Compared with Si bipolar devices, LDMOS microve power devices have higher output power, higher efficiency and wider bandwidth. So it tends to become widely used in military radar electronics system. The differences are RF pulse operation and satu- ration amplification from their traditional application. In order to make it possible that LDMOS can meet the demand by mass engi- neering use, in class C or AB operation the problem of amplitude-phase equalization of LDMOS must be solved by circuit tunning. In circuit design restraining the gain of otuside band signal, reducing induced electromotive force to improve the devices reliability and other measures are taken to achieve their engineering application in radar.

关 键 词：横向双扩散金属氧化物晶体管 静态工作点 幅相一致性 感应电动势 

分 类 号：TN386[电子电信—物理电子学]