稀土有机配合物Tb(aca)_3phen的合成及发光特性  

Synthesis of Rare Earth Complex Tb(aca)_3phen and Its Luminescent Performance Characterization

作　　者：程志明[1] 张福俊[2] 

机构地区：[1]北京交通大学理学院化学系,北京100044 [2]北京交通大学理学院光电子技术研究所,北京100044

出　　处：《光学学报》2013年第7期250-253,共4页Acta Optica Sinica

基　　金：高等学校基本科研业务费(2013JBZ004)

摘　　要：合成了绿色发光稀土有机配合物1,10-邻菲啰啉三乙酰丙酮合铽(Ⅲ)[Tb(aca)3phen],通过紫外-可见吸收光谱测试材料的吸收特性,其吸收范围主要集中在250～355nm之间,在296nm和345nm处有两个较强的吸收峰。利用345nm的紫外光激发得到了材料的光致发光光谱,观察到明显的绿色发光,发光峰位于487,545,585,621nm,分别对应5 D4→7F6,5 D4→7F5,5 D4→7F4,5 D4→7F3能级间的电子跃迁。制备了结构为ITO/PEDOT…PSS/Tb(aca)3phen…PVK/Bphen(xnm)/Al有机电致发光器件。研究了不同厚度的Bphen修饰层对器件性能的影响,当Bphen厚度为5nm时器件发光特性最优,说明5nm Bphen层可有效地阻挡空穴,提高了载流子的复合几率。当器件外加驱动电压为20V时,发光强度是没有Bphen修饰层的器件的2.4倍。Rare earth complex Tb （aca）3phen is synthesized and characterized by ultraviolet-visible adsorption spectrum, and the absorption range is mainly from 250 nm to 355 nm, which has two absorption peaks located at 296 nm and 345 nm. The photoluminescence spectra of the material show bright green emission under the excitation of 345 nm light and four emission peaks are located at 487, 545, 585, 621 nm, which correspond to the Dt→^7F6,^5D4→^7F5,^5D4→^7F4,^5D4→^7F3 electron transitions. A series of organic light emitting diodes （OLEDs） based on Tb （aca） 3 phen as emission layer are fabricated, the devices＇ structure is ITO/PEDOT： PSS/Tb （aca） 3 phen： PVK/Bphen （x nm）/A1. The effect of Bphen layer thickness on the performance of OLEDs is investigated. The recombination of hole and electrons can be increased when the thickness of Bphen is about 5 nm. The luminescent power of OLEDs is 2.4 times as large as that of OLEDs without Bphen buffer layer under 20 V driving voltage.

关 键 词：材料 光致发光 电致发光 稀土配合物 界面修饰层 

分 类 号：O432[机械工程—光学工程] O433[理学—光学]