Li掺杂对Mn-ZnO薄膜结构,电学和磁学性能的影响  

Effect of Li-Doping on the Structure and Electrical and Magnetic Properties of Mn-ZnO Film

作　　者：杜少鹏 赵晨威 罗炳成[1] 邢辉[1] 金克新[1] 陈长乐[1] 

机构地区：[1]西北工业大学陕西省凝聚态结构与性质重点实验室,陕西西安710129

出　　处：《稀有金属材料与工程》2013年第6期1306-1309,共4页Rare Metal Materials and Engineering

基　　金：国家自然科学基金(61078057;11102164;51172183);西工大基础研究基金(JC201155;JC20110237;JC201048);航空基金(2011ZF53065)

摘　　要：利用磁控溅射法在Si(110)基片上制备了Zn0.95-xLixMn0.05O(x=0,0.05)薄膜,研究了Li掺杂对Mn-ZnO薄膜结构、电学和磁学性能的影响。XRD结果表明,样品薄膜具有高度的c轴择优取向,并且没有发现其他杂相。AFM表明,Li掺入Mn-ZnO使得薄膜颗粒均匀、质地致密。霍尔测试表明,Li掺入Mn-ZnO使载流子浓度增加,然而没有改变其n型导电类型。磁性测试表明,Li掺入Mn-ZnO使得室温铁磁性增强,可由束缚极化极子(BMP)模型解释。Zn0.95-xLixMn0.05O（x=0, 0.05） films were deposited on p-Si（110） by magnetron sputtering, and their structure, and electrical and magnetic properties were investigated. X-ray diffraction （XRD） results show that the films prefer the orientation along the c-axis and no second phase is found. The surfaces become smoother and denser with Li substitution. The Hall Effect measurement indicates the doping of Li in Mn-ZnO increases the concentration of the carrier without changing the n type conductivity. Li doping increases the magnetic property of the film at room temperature, which could be explained by a bound magnetic polaron model.

关 键 词：ZNO 薄膜 载流子 

分 类 号：TN304.055[电子电信—物理电子学]