AlGaAs/GaAs量子阱探测器的吸收光谱研究  

Study of Absorption Spectrum of AlGaAs/GaAs Quantum Well Photodetectors

作　　者：赵昆[1] 杨希峰[1] 

机构地区：[1]常熟理工学院物理与电子工程学院,江苏常熟215500

出　　处：《红外》2013年第7期15-19,共5页Infrared

摘　　要：从定态Schrodinger方程出发,研究了不同Al组分和不同温度对宽量子阱红外探测器吸收光谱的影响。当体系的费米能级固定后,发现量子阱基态束缚能随着A1组分增长而变大,且相应的吸收光谱峰值趋于短波。环境温度对A1GaAs/GaAs量子阱红外探测器的响应光谱影响不大。通过理论计算定量给出了A1GaAs/GaAs量子阱红外探测器吸收光谱随量子阱阱宽、Al组分和温度变化的规律。Starting from the Schrodinger equation,the influence of different Al composition and different temperatures on the absorption spectra of wide quantum well infrared photodetectors（QWIP） is studied. It is found that when the Fermi level is fixed,the ground state bound energy of the quantum well may increase with the increasing of the Al composition and the corresponding absorption spectral peak tends to move toward the short wave.In addition,the influence of the ambient temperature on the response spectra of AlGaAs/GaAs QWIPs is negligible.After theoretical calculation,the rule of the absorption spectrum of an AlGaAs/GaAs QWIP changing with quantum well width,Al composition and temperature is given.

关 键 词：ALGAAS GAAS量子阱 量子阱红外探测器 吸收光谱 

分 类 号：TN215[电子电信—物理电子学]