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作 者:吴振武[1,2] 刘扬[3] 韦尚江[4] 黄训[4] 张东煜[2] 周明[3] 陈立桅[4] 马昌期[2] 王华[1]
机构地区:[1]太原理工大学新材料工程技术研究中心,新材料界面科学与工程教育部重点实验室,太原030024 [2]中国科学院苏州纳米技术与仿生研究所,印刷电子技术研究中心,江苏苏州215123 [3]中国科学院苏州纳米技术与仿生研究所,纳米生物医学研究部,江苏苏州215123 [4]中国科学院苏州纳米技术与仿生研究所,国际实验室,江苏苏州215123
出 处:《物理化学学报》2013年第8期1735-1744,共10页Acta Physico-Chimica Sinica
基 金:国家自然科学基金(91123034;61274056);山西省科技创新重点团队(2012041011)资助项目~~
摘 要:报道了利用聚(3-己基噻吩)(P3HT)作为前置缓冲层来弥补(4,8-双-(2-乙基己氧基)-苯并[1,2-b:4,5-b]二噻吩)-(4-氟代噻并[3,4-b]噻吩(PBDT-TT-F):[6,6]-苯基-C61-丁酸甲酯(PC61BM)共混体相异质结(BHJ)电池对450-600nm处光谱响应不足的新的器件结构设计思路.光谱带隙为1.8eV的PBDT-TT-F在550-700nm处有很强的光谱吸收,在有机太阳电池器件上有很好的应用潜能.但其在350-550nm处的吸收不强,影响了器件对太阳光谱的利用效率.与此相比,P3HT薄膜的光谱吸收主要在450-600nm范围内,同PBDT-TT-F形成良好的互补关系.新设计的器件外量子效率(EQE)研究结果表明,利用P3HT作为前置缓冲层可以与PBDT-TT-F:PC61BM薄膜中的PC61BM形成平面异质结,从而拓展了器件在450-600nm处的光谱响应范围,实现光谱增感作用.优化P3HT的厚度为20nm左右,器件对外输出的短路光电流密度从11.42mA·cm-2提高到12.15mA·cm-2,达到了6.3%的提升.We report here the photovoltaic performance of a solar cell using poly-{[4,8-bis[(2-ethylhexyl) oxy]-benzo[1 ,2-b: 4-5-b']dithiophene-2,6-diyl]-alt-[3-fluore-2-(octyloxy)carbonyl-thieno[3-4-b]thiophene-4 ,6- diyl]} (PBDT-TT-F):[6,6]-phenyI-C61-butyric acid methyl ester (PC61BM) as the photoactive layer in combination with a thin poly(3-hexylthiophene) (P3HT) film as a photosensitizing layer. PBDT-TT-F strongly absorbs light in the wavelength range of 550-700 nm, but it absorbs relatively weakly in the range of 350-550 nm. In contrast, a P3HT film shows intensive absorption ability in the 450-600 nm region, suggesting that the absorptions of these two materials complement each other to give a broad range. An organic solar cell with the structure indium tin oxide (ITO)/poly(3,4-ethylenedioxythiophene)- polystyrenesulfonic acid (PEDOT:PSS)/P3HT/ PBDT-TT-F:[6,6]-phenyl C61-butyric acid methyl ester (PC61BM)/LiF/AI was fabricated in which P3HT was deposited between the hole transporting layer (PEDOT: PSS) and bulk heterojunction (BHJ) photoactive layer (PBDT-TT-F:PC61BM). This solar cell exhibited improved spectrum response in the wavelength range of 450-600 nm compared with one without a P3HT layer, which is attributed to the photosensitizing effect of the P3HT film. Optimization of the thickness of P3HT led to an increase of short-circuit current density (Jsc) from 11.42 to 12.15 mA-cm-2.
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