Controlling PCBM aggregation in P3HT/PCBM film by a selective solvent vapor annealing  

作　　者：SUN Yue HAN YanChun LIU JianGang 

机构地区：[1]State Key Laboratory of Polymer Physics and Chemistry,Changchun Institute of Applied Chemistry,Chinese Academy of Sciences

出　　处：《Chinese Science Bulletin》2013年第22期2767-2774,共8页

基　　金：supported by the National Natural Science Foundation of China(51273191,51073151);the National Basic Research Program of China(2009CB930603,2009CB623604)

摘　　要：A selective solvent vapor, i.e., cyclohexanone or isopropyl benzene, which is a poor solvent for poly(3-hexylthiophene-2,5-diyl) (P3HT) and a good solvent for fullerene derivative [6,6]-phenyl-C61-butyric acid methyl ester (PCBM), was employed to reduce the size of PCBM aggregates and prolong the formation time of big PCBM aggregates in P3HT/PCBM film. PCBM nucleates and aggregates of 10-20 nm scale form in the first few minutes annealing. Then the size of PCBM aggregates kept unchanged until annealing for 60 min. Finally, larger PCBM aggregates of micron-size formed hours later. On the contrary, the growth rate of PCBM aggregates was faster and their size was larger when treated with a good solvent vapor for both components. The P3HT crystallinity was the same with different types of annealing solvents, although the rate of P3HT self-organization was decreased after a selective solvent vapor annealing. Because of the smaller size of phase separation, the device annealed in a selective solvent vapor for 30 min had a higher PCE than that annealed in a good solvent vapor.A selective solvent vapor, i.e., cyclohexanone or isopropyl benzene, which is a poor solvent for poly（3-hexylthiophene-2,5-diyl） （P3HT） and a good solvent for fullerene derivative [6,6]-phenyl-C61-butyric acid methyl ester （PCBM）, was employed to reduce the size of PCBM aggregates and prolong the formation time of big PCBM aggregates in P3HT/PCBM film. PCBM nucleates and aggregates of 10-20 nm scale form in the first few minutes annealing. Then the size of PCBM aggregates kept unchanged until annealing for 60 min. Finally, larger PCBM aggregates of micron-size formed hours later. On the contrary, the growth rate of PCBM aggregates was faster and their size was larger when treated with a good solvent vapor for both components. The P3HT crystallinity was the same with different types of annealing solvents, although the rate of P3HT self-organization was decreased after a selective solvent vapor annealing. Because of the smaller size of phase separation, the device annealed in a selective sol- vent vapor for 30 min had a higher PCE than that annealed in a good solvent vapor.

关 键 词：选择性溶剂 蒸气处理 聚集体 退火 薄膜 控制 富勒烯衍生物 异丙基苯 

分 类 号：O484.1[理学—固体物理]