对LiNbO_3::Cu:Ce和LiNbO_3:Fe晶体非挥发全息存储灵敏度的研究  

Study on Nonvolatile Holographic Recording Sensitivity for LiNbO_3:Cu:Ce and LiNbO_3:Fe

作　　者：申岩[1] 赵业权[1] 

机构地区：[1]哈尔滨工业大学电气工程及自动化学院,哈尔滨150080

出　　处：《人工晶体学报》2013年第6期1012-1015,共4页Journal of Synthetic Crystals

基　　金：国家自然科学基金(11004040);黑龙江省自然科学基金(E201237)

摘　　要：以双中心模型为基础,理论研究了LiNbO3:Cu:Ce和近化学计量比LiNbO3:Fe晶体在稳态情况下的非挥发全息存储灵敏度。通过考虑了两个晶体在其深能级和浅能级中心之间所有可能的电子交换过程,理论结果显示在低光强连续光范围内LiNbO3:Fe晶体比LiNbO3:Cu:Ce晶体有着更高的记录灵敏度。并且通过研究文中得到的记录灵敏度的解析表达式,发现灵敏度与晶体浅能级上可激发离子数密度和泵浦光光强成正比。此外,采用较短波长的泵浦光和更大深能级数密度的晶体是另两种改变晶体灵敏度的方式。The sensitivity of the steady-state nonvolatile holographic recording performance with continuous-wave lights for LiNbO3:Cu:Ce and LiNbO3:Fe was studied theoretically based on the twocenter model.It took into account the direct electron transfer between the deep-trap centers and the shallow-trap centers in the two crystals.It is shown that,the LiNbO3:Fe is confirmed theoretically to be of higher recording sensitivity than the LiNbO3:Cu:Ce in the low intensity region.Through studying the analytical expression of sensitivity we got.It is found that the recording sensitivity is proportional to the concentration of the inspirable electronic on shallow-trap centers in the crystal and the intensity of the gating light.Moreover,using shorter wavelength of gating light and bigger concentration of deep-trap centers are other two ways to increase the sensitivity.

关 键 词：双中心模型 全息存储 LINBO3 Fe 灵敏度 

分 类 号：O438.1[机械工程—光学工程]