二极管非制冷红外探测器及其读出电路设计  

Uncooled diode infrared detector and design of its readout interface circuit

作　　者：祖秋艳[1] 王玮冰[1,2] 黄卓磊[1] 何鑫[1,2] 陈大鹏[1] 

机构地区：[1]中国科学院微电子研究所中国科学院微电子器件与集成技术重点实验室,北京100029 [2]江苏物联网研究发展中心,江苏无锡214315

出　　处：《红外与激光工程》2013年第7期1680-1684,共5页Infrared and Laser Engineering

基　　金：中国科学院微电子器件与集成技术重点实验室基金(Y2ZR16X001)

摘　　要：针对非制冷红外技术的低成本高性能应用,提出了基于SOI的二极管红外探测器及其读出电路的集成设计方案。阐述了二极管非制冷红外探测器的基本原理和工艺实现。对探测器的电学特性进行理论推导,得出读出电路的设计指标。采用连续时间自稳零电路结构实现探测器输出信号的低噪声低失调放大,采用级联滤波器以减弱开关非理想因素的影响,并采用片内电容采样保持,使得I/O引脚数较少,从而减小版图面积。采用spectre工具进行仿真,在CSMC 0.5μm 2P3M CMOS工艺下实现。结果表明:读出电路性能良好,闭环增益为65.8 dB,等效输入噪声谱密度为450 nV/Hz,等效输入失调电压100μV以内,功耗为5 mW,能实现探测器信号的准确读出。A design for integration of diode infrared detectors based on SOI and its readout interfacecircuit was presented for the low cost and high performance applications of uncooled infrared technology.ic principle and fabrication technology of uncooled diode infrared detectors were elaborated. Throughtheoretical derivation of the electrical characteristics of detectors,circuit design specifications were given. circuit used continuous time auto-zero technique to reduce offset voltage and suppress low frequencynoise. It amplified the signals and cascaded a filter to decrease effects of non-ideal switches. Capacitorsin chip were chosen to sample and hold, and as a result, the layout of the circuit had fewer I/O pads andsmaller area. It was simulated using spectre tool and fabricated in CSMC 0.5 （xm 2P3M CMOS process.erimental results show that this circuit has a good performance, achieving a closed-loop gain of 65.8dB,equivalent input noise power spectral density of 450nV/／/Hz,equivalent input offset voltage smallerthan lOOfjiV and power consumption of 5 mW, can accurately read out the outputs of detectors.

关 键 词：二极管非制冷红外探测器 自稳零技术 低噪声 低失调 读出电路 

分 类 号：TN43[电子电信—微电子学与固体电子学]