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出 处:《红外与激光工程》2013年第S01期103-106,共4页Infrared and Laser Engineering
摘 要:CCD芯片的量子效率表示在曝光时间内到达像素光敏面的光子转换为电子的百分比,与器件的几何结构、材料等有关,是评价CCD芯片性能的最主要因素之一。通过一定的测量装置及相应的测量方法对CCD芯片的量子效率进行测量,才能对CCD芯片的成像性能做出客观评价。因此,根据欧洲机器视觉协会制定的EMVA1288标准设计了一套CCD芯片量子效率的测量装置,并且阐述了基于量子效率的测量方法,解决了单色光生成以及对于不同CCD测量时的兼容性问题。经过反复论证,该测量装置和方法具有通用性强、高精度和高稳定度等优点。The quantum efficiency of charge coupled devices ref ers to the percentage that the photons reaching the sensitive area converts to electrons during the exposure time, determined by the geometry structures of the device, material and so on, which is one of the most important factors to evaluate performance of the charge coupled de- vices. Measuring the quantum efficiency of CCD with a certain measuring equipment and method, the objective es- timation of imaging performance can be obtained. Therefore, a setup of measuring the quantum efficiency of charge coupled devices was designed according to the EMVA 1288 standard developed by the European Machine Vision Association and elaborated a measuring method based on quantum efficiency was discussed. The method solved problems of the system measurement for the compatibility of different CCD, as well as monochromatic light genera- tion. By persistent demonstration, the setup and method have the advantages of good commonality, measurement precision and stability.
关 键 词:量子效率 CCD芯片 量子效率 测量装置 测量方法
分 类 号:TN386.5[电子电信—物理电子学]
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