钛酸铋压电陶瓷厚膜的制备  

Preparation of Bismuth Titanate Piezoelectric Ceramic Thick Film

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作  者:赵欣欣[1] 张帆[1] 

机构地区:[1]沈阳化工大学材料科学与工程学院,辽宁沈阳110142

出  处:《当代化工》2013年第7期901-902,905,共3页Contemporary Chemical Industry

摘  要:以五水硝酸铋﹑草酸和钛酸四丁酯为原料,采用化学共沉淀法,制得钛酸铋(BIT)粉体。然后采用多层晶粒生长法,通过丝网印刷制得BIT压电陶瓷厚膜。借助XRD和SEM对产物晶体结构进行表征,并研究烧结温度对取向度的影响。结果表明,650oC煅烧2 h可获得单一晶相的BIT粉体,经球磨后得到粒径小于1μm纳米粉体。1 200oC,升温速率10oC/min,保温2 h时烧结的BIT厚膜在(00k)方向上取向度最高,达到95.50%。Bismuth titanate(BIT) powders were prepared from bismuth nitrate,titanium tetrabutoxide and oxalic acid by the chemical coprecipitation method.Then BIT ceramic thick film was prepared by screen-printing method,and its crystal structure was characterized by XRD and SEM analysis,effect of calcination temperature on the orientation degree was also studied.The results show that BIT powders with single phase can be obtained by calcination at 650oC for 2 h,nanoparticles whose particle size is smaller than1 μm can be obtained by ball milling;the grain orientation(00k) of BIT thick film prepared by sintering at 1 200 oC for 2 h with the heating rate of 10 oC/ min is high,can reach to 95.5%.

关 键 词:钛酸铋 化学共沉淀法 丝网印刷 取向度 

分 类 号:TN384[电子电信—物理电子学]

 

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