DPVBi为激子阻挡层的亚单层有机发光器件的制备与光电性能研究  

Combined with DPVBi Excton Block-layer to Fabricate and Study on Optical and Electronic Performance of the Sub-monolayer OLED

作　　者：杨惠山[1] 吴丽双[1] 潘玉灼[1] 

机构地区：[1]泉州师范学院物理与信息工程学院,福建泉州362000

出　　处：《光子学报》2013年第7期772-776,共5页Acta Photonica Sinica

基　　金：福建省自然基金(No.2011J01359);福建省教育厅JK类科研项目(No.JK2011043);泉州市科技局基金项目(No.2011G16)资助

摘　　要：结合亚单层的有机发光技术,制备了一种多层有机电致发光器件,其结构为ITO/m-MTDATA(50nm)/C545T(0.05nm)/DPVBi(d nm)/DCM2(0.05nm)/Alq(60nm)/LiF(1nm)/Al.荧光材料C545T和DCM2以亚单层的方式插入DPVBi前后,通过改变DPVBi的厚度,观察器件性能的变化,当DPVBi为4nm时,器件在4V电压下最大发光效率是4.19cd/A,在13V电压下最大亮度是17050cd/m2.分析对比了四种不同厚度器件的电流密度-电压曲线、亮度-电压曲线、电致发光光谱图和色坐标,发现选择合适厚度的激子阻挡层,可以得到效率较高的器件.激子阻挡层一般选择载流子传输能力较差,HOMO能级较低的材料.所得结果对有机发光器件尤其是采用亚单层有机白光器件的设计和制作有一定的指导作用.A multiple organic light emitting device was fabricated with sub-monolayer technique, of which he structure is ITO/m-MTDATA（50 nm）/C545T（0.05 nm）/DPVBi （d nm）/DCM2 （0, 05 nm）/Alq （60 nm）/LiF（l nra）/A1. C545T and DCM2 sub-monolayer were inserted both the DPVBi ide, lgffect of the t：hickness variation of DPVBi on the device performance was studied, A he thickness of DPVBi is 4 nm, the current efficiency is 4.19 cd/A at 4 V and the luminance i 17080 vd/m2 18 V, Experimental results show that the current density-voltage, luminance=voltage, elcetrQlumineence （EL） spectra and the commission internationale de 1＇ lglirag coordinate varying voltage, etc. The current efficiency can improved when select the proper thil!aess of material acting as excton block-layer, which is the lower cavvier mobility and largely nive HOMO position, The resul obtained will be helpful for the optimal design and oper;ion of organic light emitting device, epecially for white organic light emitting device using suh-monoly emitter.

关 键 词：有机电致发光器件 亚单层 激子 亮度 效率 

分 类 号：TN383[电子电信—物理电子学]