MgO纳米线的制备及其电子发射性能的研究  

The synthesis and electron emission properities of MgO nanowires

作　　者：王灵婕[1] 熊飞兵[1] 郭太良[2] 杨尊先[2] 叶芸[2] 

机构地区：[1]厦门理工学院光电与通信工程学院,福建厦门361024 [2]福州大学物理与信息工程学院,福建福州350002

出　　处：《功能材料》2013年第13期1904-1907,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(11104234;61106053);高等学校博士学科点专项科研基金资助项目(20103514110007);教育部工程研究中心开放课题资助项目(KF1009);福建省教育厅科技资助项目(JB11184)

摘　　要：采用碳热还原-氧化法成功制备大小均匀的MgO纳米线,采用场致发射电子显微镜(FESEM)和X射线衍射(XRD)表征其形貌及晶体结构。采用丝网印刷将MgO纳米线转移到阴极电极,并将阴极电极与印刷有荧光粉的阳极电极组装成二级场致发射器件。场致电子发射测试表明MgO纳米线具有较好的电子发射特性:其阈值电场强度仅为3.82V/μm(1mA/cm2),最高电流密度达到2.68mA/cm2(4.01V/μm),发光亮度为1152cd/m2,4h内没有明显的衰减。MgO有望作为冷阴极材料在场致发射器件上得到应用。The MgO nanowires were synthesized by carbon thermal reduction-oxidation,and their morphologies and crystal structural were measured by SEM（scanning electron microscopy） and XRD（X-ray diffraction）.Then the MgO nanowires were transferred to the cathode electrode by printing,and the cathode were assembled with phosphor powder coated anode.The field emission（FE） measurement shows that the MgO nanowires possess high electron emission properties,that its threshold voltage was only 1.3V/μm（1mA/cm2） and its emission currents density can reach 2.68mA/cm2 at electric field of 4.01V/μm.It has a luminance with 1152cd/m2 without reduction in 4h.These results suggest that the MgO nanowire can be an excellent FE material candidate.

关 键 词：纳米材料 MGO 场致发射 

分 类 号：TN141[电子电信—物理电子学] TN103