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作 者:黄艳芹[1]
机构地区:[1]新乡学院化学与化工学院,河南新乡453003
出 处:《功能材料》2013年第13期1932-1935,共4页Journal of Functional Materials
基 金:国家自然科学基金资助项目(11074066)
摘 要:以快速等离子烧结法(SPS)制备的BiFeO3块体为靶材,用激光脉冲沉积(PLD)法在不同衬底上制备了BiFeO3(100)/LaNiO3(100)/Si(100)、BiFeO3(111)/LaNiO3(111)/SrTiO3(111)、BiFeO3(110)/Pt/TiO2/SiO2/Si、BiFeO3(110)LaNiO3(110)/Pt/TiO2/SiO2/Si不同择优取向的薄膜,并对薄膜进行了XRD和SEM分析。X射线衍射结果表明,BiFeO3薄膜外延沉积在导电层衬底上,并且它们具有相同的高度取向。SEM分析表明,薄膜上的晶粒是柱状形态,表面光滑致密且颗粒分布非常均匀,晶粒的边界和尺寸也能被清晰地观察到。通过铁电铁磁性能研究,BiFeO3(111)择优取向性能最佳。SrTiO3衬底上(111)取向的BiFeO3薄膜铁电剩余极化值达到了30.3μC/cm2,漏电流为1.0×10-3 A/cm2,饱和磁化强度为20.0kA/m。A pure phase BiFeO3 target was prepared by spark plasma sintering(SPS) technique.The preferred orientation and high crystallization BiFeO3 films were prepared by pulsed laser deposition(PLD) method.Above the optimal process,the BiFeO3(100)/LaNiO3(100)/Si(100),BiFeO3(111)/LaNiO3(111)/SrTiO3(111),BiFeO3(110)/Pt/TiO2/SiO2/Si and BiFeO3(110)LaNiO3(110)/Pt/TiO2/SiO2/Si thin films with different epitaxial strain have been prepared.The structural of BiFeO3 films was investigated using XRD and SEM.The X-ray diffraction result show that the BiFeO3 thin films on the conducting layers epitaxially deposited on the substrate and they had the same highly orientations.SEM analysis show that crystal grain of the film was columnar morphology,revealed smooth dense surfaces and very homogeneous grain distribution.Grain boundary and grain size could also be clearly observed.The ferroelectric and ferromagnetic properties of the BiFeO3 films were researched and the results show that the epitaxial BiFeO3(111) film had the optimal properties.The remanent polarization of ferroelectric of BiFeO3(111) film was 30.3 μC/cm2,the leakage current was 1.0×10-3 A/cm2 and the saturation magnetization was 20.0kA/m.
关 键 词:BIFEO3薄膜 铁电铁磁性 激光脉冲沉积(PLD)
分 类 号:TN304.9[电子电信—物理电子学] O484.4[理学—固体物理]
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