铜铟镓硒薄膜的真空制备工艺及靶材研究现状  

State-of-arts of vacuum fabrication technology of CIGS thin film and its sputtering target

作　　者：张冷[1] 张维佳[1] 宋登元 张辉[1] 张雷 马强[1] 刘嘉[1] 吴然嵩[1] 马晓波[1] 

机构地区：[1]北京航空航天大学物理科学与核能工程学院,北京100191 [2]英利集团有限公司,河北保定071051

出　　处：《功能材料》2013年第14期1990-1994,共5页Journal of Functional Materials

基　　金：国家高技术研究发展计划(863计划)资助项目(2012AA050304)

摘　　要：阐述了两种真空法制备铜铟镓硒(CIGS)薄膜的工艺原理和工艺过程,比较和分析了两工艺的优缺点;介绍了溅射靶材的熔融铸造法和粉末冶金法,列举了靶材制备中所需的温度、压强、保温时间等参数。最后分析认为,用均匀细小的黄铜矿相CIGS粉末压制烧结成四元靶材,经溅射成膜后退火处理,可制备出优异的CIGS薄膜,具有更广阔的应用前景。Two vacuum preparing principles and procedures of CIGS thin film are illustrated in this paper.Relative merits of the two methods are investigated and analyzed.The molten casting method and powder metallurgy method for quaternary target manufacture are described.As required in the target preparation,the parameters,such as temperature,pressure and hold time,are elaborated.The annealed thin films which are sputtered from quaternary targets by employing uniform and fine powders,following with pressing and sintering,are supposed to have greater application prospects.

关 键 词：CIGS 真空 薄膜 溅射靶 

分 类 号：TM914[电气工程—电力电子与电力传动]