利用SiO_2的表面化学修饰提高纳米SnO_2的热稳定性  

Improvement of thermal stability of nanometer SnO_2 by surface chemical modification with SiO_2

作　　者：詹自力[1] 司莉粉 李广伟[1] 郭雪原[1] 周志玉[1] 

机构地区：[1]郑州大学化工与能源学院,河南郑州450001

出　　处：《功能材料》2013年第14期2120-2123,共4页Journal of Functional Materials

基　　金：教育部留学回国人员科研启动基金资助项目(2012-940);河南省重点科技攻关资助项目(0624220059)

摘　　要：以3-氨丙基三乙氧基硅烷(3-APTES)为表面修饰剂,利用乙氧基与SnO2表面羟基之间的化学反应,将SiO2化学接枝于SnO2表面,以阻止SnO2晶粒热生长。采用SEM、TEM、FT-IR、XRD和EDS等技术对改性后纳米SnO2进行结构表征。结果表明,SiO2通过Sn—O—Si化学键与SnO2相连接,SiO2被高度分散于SnO2表面。经1000℃高温煅烧后,SnO2平均粒径改性前后分别为95和10nm。SiO2作为第二相,阻碍了晶界的移动,增加了晶粒生长活化能,从而有效地限制了晶粒高温生长,提高了纳米SnO2的热稳定性。The ethoxyl groups of 3-aminopropyl triethoxysilane（3-APTES）,as a surface modifier,reacted with hydroxyls of SnO2.SiO2 was grafted on the surface of SnO2 to inhibit the growth of the SnO2 nanocrystal.As-synthesized samples were characterized by SEM,TEM,FT-IR,XRD and EDS.The results show that the SiO2 remains strongly bonded at the SnO2 surface through Sn—O—Si bonds,the average particle size of modified SnO2 is only 10nm after 1000℃ calcination.However,that of pure SnO2 is 95nm at the same calcination.The well-dispersed SiO2 as a second phase resists the movement of grain boundary and increased the activation energy of crystal growth.Nanocrystal growth of SnO2 is effectively restricted up to 1000℃.So the thermal stability of SnO2 has been improved.

关 键 词：SNO2 表面修饰 热稳定性 晶界移动 气敏材料 

分 类 号：TB34[一般工业技术—材料科学与工程]