多孔硅表面钝化对其发光性能的影响  

The Influences of Surface Passivation on Luminescence Properties of Porous Silicon

作　　者：李宏建[1] 瞿述[1] 剪之渐 彭景翠 向建南[2] 

机构地区：[1]湖南大学电子材料研究所,10082 [2]湖南大学化学化工学院,长沙410082

出　　处：《Chinese Journal of Chemical Physics》2000年第4期492-496,共5页化学物理学报（英文）

基　　金：湖南省自然科学基金

摘　　要：报道多孔硅（ＰＳ）的表面钝化对其光致发光（ＰＬ）和电致发光（ＥＬ）的影响。ＰＬ和ＥＬ谱表明，经钝化处理的ＰＳ的ＰＬ和ＥＬ强度明显增强，且发光峰位较大蓝移；存放实验表明，经钝化处理的ＰＳ的ＰＬ和ＥＬ发光强度和发光峰位具有较好的稳定性；Ｉ～Ｖ曲线显示，经钝化处理的ＰＳ发光器件具有较低的启动电压。这些结果表明：用钝化处理的方法是提高 ＰＳ的 ＰＬ和 ＥＬ强度和稳定性及改善其器件性能的有效途径。By using n-butylamine as carbon resource, a layer of carbon film is covered on the parous silicon (PS) surface by means of radio frequency glow discharge. Raman spectra and IR spectra of the carbon film indicate that there are amino-groups and hydrogen atoms in the carbon film. IR spectra exhibits that the surface of the treated sample is mainly covered with Si-C, Si-N and Si-O. The influences of surface passivation of photoluminescence and electroluminescence properties of porous silicon have been presented. PL and EL spectra indicate that PL and EL intensity of the treated samples increase greatly and the blueshift of PL and EL peak compared with the samples without treatment and stable While storing in atmosphere. I-V characteristics reveal that the treated devices have a lower onset voltage. We present that the enhancement of the PL and EL intensity, stability and lower onset voltage of the treated sample is due to the existence of Si-C, Si-N and Si-O on the PS surface simultaneously, and blueshift of the PL and El peak are attributed to amino-groups and hydrogen atmos in the carbon film, As a result, carbon film passivation is a good way to enhance PS luminescent intensity and stability and improve the properties of PS devices.

关 键 词：多孔硅 表面钝化 光致发光 电致发光 

分 类 号：O482.31[理学—固体物理]