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作 者:傅希贤[1] 桑丽霞[1] 白树林[1] 杨秋华[1] 王俊珍[1] 孙艺环[1] 曾淑兰[1]
出 处:《Chinese Journal of Chemical Physics》2000年第4期503-507,共5页化学物理学报(英文)
基 金:国家自然科学基金资助课题!(No.59772019)
摘 要:研究LaFeO3及微量掺铜LaFeO3的光催化活性,利用正电子湮没谱分析掺杂的影响,发现随着掺杂百分比的增加,正电子寿命逐渐下降达到一最小值,然后又上升;而光催化活性随掺杂百分比的增加逐渐上升达到最大值,然后下降。结果表明: LaFeO3掺杂后先催化活性得以提高;正电子湮没技术是研究点阵缺陷结构的有效方法之一。The photocatalytic activity of LaFeO3 and Cu-LaFeO3 has been studied. By means of technology of positron annihilation, it is found that the positron life deceased with increasing doping atom. After reduced to minimum, the positron life raised with concentration of doping atom. Conversely, the photocatalytic activity increased with doping atom and raised to a maximum, after that, the photocatalytic activity decreased. The obtained results show that the photocatalytic activity of doped LaFeO3 is higher than undoped. The technology of positron annihilation is one of the effective method for an investigation in lattice defect structure.
关 键 词:LaFe1/xCuxO3 光催化活性 正电子湮没 结构 缺陷
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