Synthesis of antiferroelectric (Bi_(0.534)Na_(0.5))_(0.94)Ba_(0.06)TiO_3 ceramics with high phase transition temperature and broad temperature range by a solid-state reaction method  

作　　者：LI XiaoJuan XI ZengZhe LONG Wei FANG PinYang 

机构地区：[1]School of Materials and Chemical Engineering, Xi'an Technological University

出　　处：《Chinese Science Bulletin》2013年第23期2893-2897,共5页

基　　金：supported by the National Basic Research Program of China(2013CB632904);the National Natural Science Foundation of China(51072155);Scientific Research Program Funded by Shaanxi Provincial Education Department(2010JK604);President Foundation of Xi'an Technological University,China(XAGDXJJ1010);Fostering Talents Foundation of Xi'an Technological University

摘　　要：Antiferroelectric 0.94(Bi 0.534 Na 0.5 )TiO 3 -0.06BaTiO 3 ceramics were prepared using a solid-state reaction method, involving the addition of excessive amounts of Bi2O3 . The resulting ceramics featured a very high phase transition temperature (Tm～330°C), from the antiferroelectric to the paraelectric phase, and a low depolarization temperature (Td<25°C). The broad temperature range, within which antiferroelectric properties are retained, of the prepared materials indicates their higher potential over lead-based antiferroelectric ceramics such as PZT-based materials that exhibit a lower T m ≤170°C. The lower Td and higher T m obtained val- ues, relative to those reported in the literature, are believed to be due to the formation of A-site vacancies originating from the incorporation of excess Bi into the perovskite structure of the studied sample. In addition, the synthesized sample shows a high dielectric constant of ～1460, in a temperature range of 50-150°C at 1 kHz, and a high energy storage density of 0.71 J/cm 3 , which is an asset in energy storage capacitor applications.Antiferroelectric 0.94（Bi0.534Na0.5）TiO3-0.06BaTiO3 ceramics were prepared using a solid-state reaction method, involving the addition of excessive amounts of Bi203. The resulting ceramics featured a very high phase transition temperature （Tm -330℃）, from the antiferroelectric to the paraelectric phase, and a low depolarization temperature （Td 〈 25℃）. The broad temperature range, within which antiferroelectric properties are retained, of the prepared materials indicates their higher potential over lead-based antiferroeleetric ceramics such as PZT-based materials that exhibit a lower Tm ≤ 170℃. The lower Ta and higher Tm obtained values, relative to those reported in the literature, are believed to be due to the formation of A-site vacancies originating from the incorporation of excess Bi into the perovskite structure of the studied sample. In addition, the synthesized sample shows a high dielectric constant of -1460, in a temperature range of 50-150℃ at 1 kHz, and a high energy storage density of 0.71 J/cm^3, which is an asset in energy storage capacitor applications.

关 键 词：陶瓷制备 温度范围 相变温度 固态反应 反铁电 合成 PZT材料 钙钛矿结构 

分 类 号：TB30[一般工业技术—材料科学与工程]