1eV带隙GaNAs/InGaAs短周期超晶格太阳能电池的设计  

The design of 1 eV band-gap of GaNAs/InGaAs short-period super-lattice solar cell

作　　者：王海啸[1,2] 郑新和[1] 文瑜[1] 吴渊渊[1,2] 甘兴源[1,2] 王乃明[1] 杨辉[1] 

机构地区：[1]中国科学院苏州纳米技术与纳米仿生研究所,中国科学院纳米器件与应用重点实验室,苏州215123 [2]中国科学院大学,北京100190

出　　处：《中国科学：物理学、力学、天文学》2013年第8期930-935,共6页Scientia Sinica Physica,Mechanica & Astronomica

基　　金：国家自然科学基金(批准号:61274134);苏州市国际合作项目(编号:SH201215)资助

摘　　要：使用In,N分离的GaNAs/InGaAs短周期超晶格作为有源区是未来实现高效率GaInNAs基太阳能电池的重要结构之一.同时,考虑到具有1eV带隙的GaInNAs子电池的重要性以及与Ge衬底晶格匹配的优势,基于Ge衬底上的四结及多结太阳能电池无疑荣景可期.为在实验上较好地控制所需带隙,我们利用传输矩阵方法从理论上计算了实现1eV带隙下超晶格的周期数、垒层厚度以及In,N的浓度,并进一步讨论分析1eV带隙下的多个相关参数的对应关系以及超晶格的应变状态.The GaNAs/InGaAs short-period super-lattice（SPSL） with a feature of space separation in In and N constituent and equivalent 1 eV band-gap is one of important structures as an active region to achieve high efficiency of GaInNAs- based solar cell in the future. To experimentally realize the required band-gap for high conversion efficiency in multi- junction solar cells on Ge substrate, we demonstrate a propagation matrix method to calculate some dependences of GaNAs/InGaAs SPSLs on their structural parameters. The results show that the GaNAs/InGaAs SPSL structures can be flexible to obtain the 1 eV energy gap by a reasonable choice of the period number, barrier thickness as well as concentrations of In and N. Additionally, the calculation illustrates a relationship of respective modulation from those super-lattice structures for the SPSL active region which emits or absorbs light at 1 eV in energy.

关 键 词：GaNAs InGaAs短周期超晶格 传输矩阵方法 太阳能电池 超晶格参数 

分 类 号：TM914.4[电气工程—电力电子与电力传动]