位错在金刚石—硅复合材料中引起的应力场  

STRESS FIELD CAUSED BY A DISLOCATION IN DIAMOND-SI BIMATERIAL

作　　者：王沪毅[1] 杨玉明[1] 胡文军[1] 李建国[1] 

机构地区：[1]中国工程物理研究院总体工程研究所,四川绵阳621900

出　　处：《机械强度》2013年第4期428-437,共10页Journal of Mechanical Strength

基　　金：国家自然科学基金资助项目(10802081)~~

摘　　要：研究中利用镜像法建立物理模型。将复合材料转化为两个无限大体结构,并在界面位置上分布相应的位错密度函数。基于Stroh formalism得到各向异性场中的控制方程。通过构造解的形式,求得封闭的位错密度函数的解,最终得到应力场理论解。通过检验边界条件验证所得结果的正确性。讨论位错位置、位错混合度和晶向方向对界面上应力σ12、σ22和σ23的影响,同时给出解偶和耦合情况下位错产生的应力分布。所得结果通用于该类型各向异性复合材料,也可用于研究相关的位错动力学问题。Physical model is set up by utilizing the image method.The composite material is transformed into two infinite homogenous media,and dislocation density functions are strategically distributed on the interface.In anisotropic media,the governing equations are obtained based on Stroh formalism.The solutions of the dislocation densities are constructed and then solved in a closed form.The stress field is obtained and verified by the boundary conditions.The effects of dislocation position,mixity,and crystallographic orientation on the stresses σ12,σ22 and σ23 are investigated numerically.Finally,the contour plots of stresses are given in decoupled and coupled problems.The results are applied to general anisotropic composite material,and also can be used to study dislocation dynamics.

关 键 词：镜像法 复合材料 位错密度函数 各向异性 

分 类 号：O343.8[理学—固体力学]