腐蚀液配方对刻蚀高阻硅多孔阵列结构形貌影响的研究  

Effects of solution composition on morphology of macropore arrays etched by electrochemical etching on high ρ n-Si

作　　者：蒋稳[1] 邹宇[1] 伍建春[1] 展长勇[1] 朱敬军[1] 安竹[1] 杨斌[1] 黄宁康[1] 

机构地区：[1]四川大学原子核科学技术研究所,辐射物理及技术教育部重点实验室,四川成都610064

出　　处：《功能材料》2013年第15期2222-2226,共5页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(11205107);教育部博士点基金资助项目(20120181120063)

摘　　要：采用电化学刻蚀方法,在n型高阻单晶硅片上进行有序多孔阵列的制备。就腐蚀液配方的改变对制备的多孔阵列结构的形貌进行观察研究。研究表明,在其它相同的实验条件下,改变组元乙醇的比例,制备的多孔阵列结构形貌会有显著的差别。随着腐蚀液中组元乙醇含量的减小,制备的多孔阵列结构中的孔的表面及断面形貌逐渐显得光滑、平整。当改变腐蚀液配方中的HF浓度时,制备的多孔阵列结构中的孔的大小及深度也随之改变,对此的机制进行了探讨。Silicon macropore arrays were prepared on high ρ silicon wafer by electrochemical etching method and the surface and cross-section of the arrays were presented.The effect of etching solution on morphology of macropore arrays was studied in this paper.The results showed that the morphologies of the silicon macropore arrays were greatly affected by the composition of etching solution.Under the same other conditions,the wall of inner hole became smooth and flat with decreasing ethanol.And it was found that the size and depth of the macropores were changed with changing HF concentration.The related mechanism was discussed.

关 键 词：中子探测器 电化学刻蚀 多孔硅阵列 形貌 

分 类 号：TL816.3[核科学技术—核技术及应用] TN303[电子电信—物理电子学]