CF_4射频等离子体对硅橡胶绝缘子表面的疏水改性  被引量:7

Hydrophobic Modification on the Surface of Silicone Rubber Insulator by CF_4 RF Plasma

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作  者:高松华[1] 周克省[2] 

机构地区:[1]三明学院机电工程学院功能材料研究室,福建三明365004 [2]中南大学物理与电子学院,湖南长沙410083

出  处:《高分子材料科学与工程》2013年第8期101-104,109,共5页Polymer Materials Science & Engineering

基  金:福建省自然科学基金资助项目(2012J01016);国家自然科学基金青年项目(11102100)

摘  要:采用CF4射频感性和容性2种耦合等离子体分别对绝缘用硅橡胶试样表面进行疏水改性。利用原子力显微镜(AFM)和X射线光电子能谱(XPS)分析试样表面微观形貌和表面化学成分变化,采用静态接触角表征试样表面润湿性的变化。结果表明,2种处理工艺相比,容性耦合等离子体工艺处理后试样表面的Si-F与C-F物质的量比与表面粗糙度的增加量都大于感性耦合等离子体工艺处理试样;CF4射频等离子体对硅橡胶试样表面处理过程中,氟化、剥离和刻蚀的作用同时存在且互相竞争,致使在试样表面引入含氟基团的同时改变了试样的表面微观形貌;试样表面含氟基团的引入和表面粗糙度的增加之间的协同作用是改性后硅橡胶表面的疏水性能得到大幅提高的主要原因。The hydrophobic modification of surface of silicone rubber(SIR) used as insulator was carried out by CF4 radio frequency(RF) capacitively coupled plasma(CCP) and inductively coupled plasma(ICP).The topography and chemical composition of modified SIR samples were characterized by atomic force microscope(AFM) and X-ray photoelectron spectroscopy(XPS),respectively.The static contact angle(SCA) was employed to investigate the surface wettability of SIR samples.The results indicate that the molar ratio of Si-F/C-F and the increase of surface roughness of SIR samples treated by CCP processing are higher than those treated by ICP processing.The fluorination and ablation or etching action are parallel and competitive,resulting in the introduction of fluoric groups and the change of surface micro-morphology occurring on the SIR surface simultaneously.The improvement of hydrophobicity is mainly ascribed to the synergistic reaction of the introduction of fluoric groups on the surface of SIR sample and the increase of surface roughness that was created by the ablation or etching reaction of CF4 plasma.

关 键 词:CF4射频等离子体 硅橡胶绝缘子 表面 疏水改性 原子力显微镜 X射线光电子能谱 

分 类 号:TQ333.93[化学工程—橡胶工业]

 

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