一种真空度可调的圆片级封装技术  

A WLP Process with the Adjustable Vacuum

作　　者：罗蓉[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《微纳电子技术》2013年第8期534-537,共4页Micronanoelectronic Technology

摘　　要：提出了一种MEMS器件的圆片级封装技术。通过金硅键合和DRIE通孔制备等关键工艺技术,可以实现真空度从102 Pa到2个大气压可调的圆片级封装。作为工艺验证,成功实现了圆片级真空封装MEMS陀螺仪的样品制备。对封装后的陀螺仪样品进行了剪切力和品质因数Q值测试,剪切力测试结果证明封装样品键合强度达到5 kg以上,圆片级真空封装后陀螺的品质因数Q值约为75 000,对该陀螺的品质因数进行了历时1年的跟踪测试,在此期间品质因数Q的最大变化量小于7‰,品质因数测试结果表明封装具有较好的真空特性。A MEMS wafer level package （WLP） vacuum package from 10^2 Pa to 2 atm was realized and deep reactive ion etching （DRIE）, etc. To ver MEMS gyroscope was fabricated successfully. The technology was presented. The wafer level with the technology of Au-Si eutectic bonding ify the process, a wafer-level vacuum package cut stress and Q factor of the packaged gyro- scope were tested. The test result of the cut stress shows that the bonding strength is more than 5 kg. The Q factor of the wafer-level vacuum package MEMS gyroscope is about 75 000. The tracking test of the Q factor was performed within one year. The maximum variation of the Q factor is less than 7%0, and the test result of the Q factor shows good vacuum of the WLP.

关 键 词：微电子机械系统(MEMS) 圆片级封装(WLP) 密封 深反应离子刻蚀(DRIE) 金硅共晶键合 

分 类 号：TN305.94[电子电信—物理电子学]