Angular dependence of multiple-bit upset response in static random access memories under heavy ion irradiation  

作　　者：张战刚 刘杰 侯明东 孙友梅 苏弘 段敬来 莫丹 姚会军 罗捷 古松 耿超 习凯 

机构地区：[1]Institute of Modern Physics, Chinese Academy of Sciences [2]University of Chinese Academy of Sciences

出　　处：《Chinese Physics B》2013年第8期529-533,共5页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.11179003,10975164,10805062,and 11005134)

摘　　要：Experimental evidence is presented relevant to the angular dependences of multiple-bit upset （MBU） rates and patterns in static random access memories （SRAMs） under heavy ion irradiation. The single event upset （SEU） cross sections under tilted ion strikes are overestimated by 23.9%-84.6%, compared with under normally incident ion with the equivalent linear energy transfer （LET） value of 41 MeV/（mg/cm2）, which can be partially explained by the fact that the MBU rate for tilted ions of 30° is 8.5%-9.8% higher than for normally incident ions. While at a lower LET of - 9.5 MeV/（mg/cm2）, no clear discrepancy is observed. Moreover, since the ion trajectories at normal and tilted incidences are different, the predominant double-bit upset （DBU） patterns measured are different in both conditions. Those differences depend on the LET values of heavy ions and devices under test. Thus, effective LET method should be used carefully in ground-based testing of single event effects （SEE） sensitivity, especially in MBU-sensitive devices.Experimental evidence is presented relevant to the angular dependences of multiple-bit upset （MBU） rates and patterns in static random access memories （SRAMs） under heavy ion irradiation. The single event upset （SEU） cross sections under tilted ion strikes are overestimated by 23.9%-84.6%, compared with under normally incident ion with the equivalent linear energy transfer （LET） value of 41 MeV/（mg/cm2）, which can be partially explained by the fact that the MBU rate for tilted ions of 30° is 8.5%-9.8% higher than for normally incident ions. While at a lower LET of - 9.5 MeV/（mg/cm2）, no clear discrepancy is observed. Moreover, since the ion trajectories at normal and tilted incidences are different, the predominant double-bit upset （DBU） patterns measured are different in both conditions. Those differences depend on the LET values of heavy ions and devices under test. Thus, effective LET method should be used carefully in ground-based testing of single event effects （SEE） sensitivity, especially in MBU-sensitive devices.

关 键 词：single event effects effective LET method multiple-bit upset upset cross section 

分 类 号：TP333[自动化与计算机技术—计算机系统结构] O571.6[自动化与计算机技术—计算机科学与技术]