Effect of the V/Ⅲ ratio during buffer layer growth on the yellow and blue luminescence in undoped GaN epilayer  

作　　者：CHAI XuZhao ZHANG Yun LIU Bin XIE ZiLi HAN Ping YE JianDong HU LiQun XIU XiangQian ZHANG Rong ZHENG YouDou 

机构地区：[1]School of Electronic Science and Engineering,Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,National Laboratory of Solid State Microstructure,Nanjing University

出　　处：《Science China(Physics,Mechanics & Astronomy)》2013年第9期1694-1698,共5页中国科学：物理学、力学、天文学（英文版）

基　　金：supported by the Special Funds for Major State Basic Research Project (Grant Nos.2011CB301900,2012CB619304,and 2012CB619200);the Hi-tech Research Project (Grant No.2011AA03A103);the National Natural Science Foundation of China (Grant Nos.60990311,60820106003,60906025,60936004,and 61176063);the Natural Science Foundation of Jiangsu Province (Grant Nos.BK2008019,BK2011010,BK2010385,BK2009255,and BK2010178);the Program Granted for Scientific Innovation Research of College Graduate in Jiangsu Province (Grant No.CXLX12_0049);the Research Funds from NJU-Yangzhou Institute of Opto-electronics;a project funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions

摘　　要：Effect of the V/III ratio during buffer layer growth on the yellow and blue luminescence in undoped GaN epilayer has been studied by means of photoluminescence spectroscopy and high resolution X-ray diffraction.It is found that the densities of screw and edge threading dislocations increase with the V/III ratio of the buffer layer,and the intensities of the yellow luminescence(YL) and blue luminescence(BL) emissions also increase dramatically.However,the density ratio of the edge threading dislocation to the screw threading dislocation remains invariant,as well as the intensity ratio of YL emission to BL emission.It can be concluded from these phenomena that the edge threading dislocation and screw threading dislocation can enhance the YL and BL emissions,respectively.Effect of the V/III ratio during buffer layer growth on the yellow and blue luminescence in undoped GaN epilayer has been studied by means of photoluminescence spectroscopy and high resolution X-ray diffraction.It is found that the densities of screw and edge threading dislocations increase with the V/III ratio of the buffer layer,and the intensities of the yellow luminescence（YL） and blue luminescence（BL） emissions also increase dramatically.However,the density ratio of the edge threading dislocation to the screw threading dislocation remains invariant,as well as the intensity ratio of YL emission to BL emission.It can be concluded from these phenomena that the edge threading dislocation and screw threading dislocation can enhance the YL and BL emissions,respectively.

关 键 词：yellow luminescence blue luminescence V/Ⅲ ratio 

分 类 号：TN304.054[电子电信—物理电子学]