Large-area surface-enhanced Raman scattering-active substrates fabricated by femtosecond laser ablation  

作　　者：ZHU ZhiQing YAN ZhenDong ZHAN Peng WANG ZhenLin 

机构地区：[1]School of Physics and National Laboratory of Solid State Microstructures,Nanjing University

出　　处：《Science China(Physics,Mechanics & Astronomy)》2013年第9期1806-1809,共4页中国科学：物理学、力学、天文学（英文版）

基　　金：supported by the National Natural Science Foundation of China (Grant Nos.51271092 and 11274160)

摘　　要：A rapid and simple approach to fabricate large-area surface-enhanced Raman scattering-active(SERS-active) substrates is reported.The substrates are fabricated by using femtosecond laser(fs-laser) direct writing on Silicon wafers,followed by thin-film coating of metal such as gold.The substrates are demonstrated to exhibit signal homogeneity and good enhancement ability for SERS.The maximum enhancement factor(EF) up to 3×10 7 of such SERS substrates for rhodamine 6G(R6G) at 785 nm excitation wavelength was measured.This technique could demonstrate a functional microchip with SERS capability of signal homogeneity,high sensitivity and chemical stability.A rapid and simple approach to fabricate large-area surface-enhanced Raman scattering-active（SERS-active） substrates is reported.The substrates are fabricated by using femtosecond laser（fs-laser） direct writing on Silicon wafers,followed by thin-film coating of metal such as gold.The substrates are demonstrated to exhibit signal homogeneity and good enhancement ability for SERS.The maximum enhancement factor（EF） up to 3×10 7 of such SERS substrates for rhodamine 6G（R6G） at 785 nm excitation wavelength was measured.This technique could demonstrate a functional microchip with SERS capability of signal homogeneity,high sensitivity and chemical stability.

关 键 词：surface-enhanced Raman scattering femtosecond laser ablation metal microstructure 

分 类 号：TN24[电子电信—物理电子学]