Ce,Mn∶YAG单晶的生长及光学性能  

Growth and Luminescence Properties of Ce,Mn∶YAG Single Crystal

作　　者：张志敏[1] 梁晓娟[1] 赵斌宇[2] 陈兆平[1] 刘炳峰[1] 钟家松[2] 向卫东[1] 吕春燕[3] 

机构地区：[1]温州大学化学与材料工程学院,温州325035 [2]同济大学材料科学与工程学院,上海200092 [3]湖州师范学院化学系,湖州313000

出　　处：《高等学校化学学报》2013年第8期1826-1832,共7页Chemical Journal of Chinese Universities

基　　金：国家自然科学基金(批准号:51172165);浙江省自然科学基金重点项目(批准号:Z4110347);浙江省自然科学基金(批准号:LY12E02002);温州市科技局计划项目(批准号:G20090082);湖州市自然科学基金(批准号:2011YZ02)资助

摘　　要：采用提拉法生长了白光发光二极管(LED)用Ce,Mn∶YAG单晶,通过X射线衍射(XRD)测试、X射线吸收精细结构(XAFS)测试、吸收光谱和激发发射光谱对其晶相结构、掺杂Mn的价态和光谱特性进行了表征,并研究了晶片厚度及驱动电流的变化对LED器件光电性能的影响.在460 nm蓝光的激发下,Ce,Mn∶YAG单晶的发射光谱可由中心波长526和566 nm的宽带发射峰复合而成.XAFS测试结果表明,所得单晶中掺杂Mn的价态以正二价为主.由于Ce3+和Mn2+在YAG单晶中存在能量传递,荧光光谱中566 nm处的橙色发射峰对应于Mn2+离子4T1→6A1能级的辐射跃迁.Ce,Mn： YAG single crystal for white light emitting diode（LED） was grown by Czochralski method. The structure, valence states of doped Mn and optical properties of the samples were characterized by X-ray diffraction（XRD）, X-ray absorption fine structure（XAFS）, absorption and photoluminescence spectra. The photoelectric parameters of white LED were also measured by changing the thickness of single crystal and the driving current. Ce,Mn： YAG single crystal shows a broad emission band peak around 526 nm and 566 nm under blue light of 460 nm. The XAFS result shows that the valence states of doped Mn are mostly Mn^2＋ in the Ce,Mn： YAG. Due to the effective energy transfer between Ce^3＋ and Mn^2＋ in YAG single crystal, the bright orange luminescence in the bands peaked at 566 nm are caused by the ^4T1→^6A1 radiative transitions of Mn^2＋.

关 键 词：白光LED 钇铝石榴石 晶体生长 光学性能 

分 类 号：O611.6[理学—无机化学] O734.3[理学—化学]