NiO薄膜的脉冲激光沉积及其结构和光学特性研究  

Pulsed laser deposition of NiO thin films and study of their structure and optical properties

作　　者：李琳[1] 董燕[1] 余亮[1] 文亚南[1] 梁齐[1] 

机构地区：[1]合肥工业大学电子科学与应用物理学院,安徽合肥230009

出　　处：《电子元件与材料》2013年第8期22-25,共4页Electronic Components And Materials

基　　金：安徽省自然科学基金资助项目(No.11040606M63)

摘　　要：利用脉冲激光沉积法在ITO玻璃衬底上制备了NiO薄膜,利用XRD、AFM对样品的晶体结构和表面形貌进行了表征,并对其透射光谱进行了测试,研究了衬底温度及脉冲激光能量对所制NiO薄膜的结构、形貌和光学特性的影响。结果表明：在脉冲激光能量为180 mJ、衬底温度为600~700℃条件下所制备的样品为沿（111）晶面择优取向生长的多晶NiO薄膜,薄膜结晶质量良好,表面颗粒排列均匀,可见光透射率较高,禁带宽度为3.40~3.47 eV。NiO thin films were prepared on ITO glass substrates by pulsed laser deposition.The crytal structures and surface morphologies of the prepared samples were characterized by XRD and AFM.The optical transmission spectra of the deposited films were measured.The influences of the substrate temperature and pulsed laser energy on the structure,morphology and optical properties of the prepared NiO films were investigated.The results show that the NiO thin films grown at substrate temperature from 600 ℃ to 700 ℃ with 180 mJ of pulsed laser energy are polycrystalline and preferentially oriented along the（111） plane,with good crystallinity,uniform surface crystallites,high visible light transmissivity,and energy gaps of 3.40–3.47 eV.

关 键 词：NIO 多晶薄膜 宽禁带半导体 脉冲激光沉积 透射率 择优取向 

分 类 号：TN304.2[电子电信—物理电子学] O484[理学—固体物理]