PLD法在不同氧分压下制备ZnO薄膜的XPS分析  

XPS analysis of ZnO thin films obtained by pulsed laser deposition at various oxygen partial pressures

作　　者：何建廷[1] 杨淑连[1] 魏芹芹[1] 宿元斌[1] 

机构地区：[1]山东理工大学电气与电子工程学院,山东淄博255049

出　　处：《电子元件与材料》2013年第8期29-31,34,共4页Electronic Components And Materials

基　　金：国家自然科学基金资助项目(No.90301002)

摘　　要：在不同氧分压下用脉冲激光沉积法(PLD)在n型硅(111)衬底上生长ZnO薄膜,对薄膜进行了X射线衍射(XRD)和X射线光电子能谱(XPS)分析,研究了氧分压对所制薄膜结晶质量的影响。结果表明,当氧分压为0.13 Pa时,Zn 2p和O 1s态电子的结合能较大。随着氧分压的增加,Zn 2p和O 1s态电子的结合能变小,说明更多的Zn原子和O原子产生了结合。氧分压为6.50 Pa时,所制ZnO薄膜的XRD衍射峰半高宽最小,其Zn、O粒子数比最接近化学计量比,说明在此氧分压下生长的ZnO薄膜结晶质量最好。ZnO thin films were deposited on n-Si（111） substrate at various oxygen partial pressures by pulsed laser deposition（PLD）.The effect of oxygen partial pressure on crystalline quality of the prepared films was invistigated with X-ray diffraction（XRD） and X-ray photoelectron energy spectroscopy（XPS）.The results show that the binding energies of Zn 2p and O 1s are higher at the oxygen partial pressure of 0.13 Pa.With the increasing of oxygen partial pressure,the binding energies of Zn 2p and O 1s get smaller,indicating that more zinc atoms are bound to oxygen atoms.The smallest FWHM of XRD and the near-stoichiometric ratio（R（Zn：O）） indicate that the crystalline quality of ZnO film prepared at 6.50 Pa is the optimal.

关 键 词：XPS ZnO 脉冲激光沉积 氧分压 化学计量比 峰面积 结合能 

分 类 号：TN304[电子电信—物理电子学]