H_3BO_3掺杂的Ba_5Nb_4O_(15)陶瓷的烧结及介电性能  

Sintering and dielectric properties of H_3BO_3-doped Ba_5Nb_4O_(15) ceramics

作　　者：何茗[1] 

机构地区：[1]成都工业学院通信工程系,四川成都610031

出　　处：《电子元件与材料》2013年第8期42-44,52,共4页Electronic Components And Materials

基　　金：中国博士后基金资助项目(No.2013M531949);四川省教育厅基金资助项目(No.11ZD15)

摘　　要：采用传统的固相烧结工艺制备了H3BO3掺杂的Ba5Nb4O15陶瓷。研究了H3BO3掺杂量对Ba5Nb4O15陶瓷的相成分、微观结构、烧结以及微波介电性能的影响。结果表明:H3BO3掺杂的Ba5Nb4O15陶瓷中,除主晶相Ba5Nb4O15相外,还生成了BaNb2O6和BaB2O4相;H3BO3能够将Ba5Nb4O15陶瓷的烧结温度降低500℃左右,同时没有显著损害该陶瓷的微波介电性能;当H3BO3掺杂量为质量分数1%时,900℃烧结的Ba5Nb4O15陶瓷具有良好的微波介电性能:εr=38.8,Q×f=48 446 GHz,τf=37.0×10–6/℃。H3BO3doped Ba5Nb4O15 ceramics were prepared by the conventional solid-state sintering process.The effects of H3BO3doping amount on the phase composition,microstructure,sintering and microwave dielectric properties of prepared Ba5Nb4O15ceramics were investigated.The results show that,in addition to the major crystalline phase Ba5Nb4O15 phase,a little BaNb2O6 and BaB2O4 phases form in the H3BO3doped Ba5Nb4O15ceramics.It is also found that H3BO3 can decrease the sintering temperature of the ceramics by about 500 ℃ without seriously deteriorating the microwave dielectric properties.Typically,the ceramic doped with 1%（mass fraction） H3BO3 sintered at 900 ℃ shows good microwave dielectric properties： εr=38.8,Q×f=48 446 GHz,τf= 37.0×10–6/℃.

关 键 词：H3BO3 Ba5Nb4O15 微波介电性能 烧结 陶瓷 掺杂 

分 类 号：TM28[一般工业技术—材料科学与工程]