逆导型非穿通绝缘栅双极晶体管仿真  

Simulation of Reverse-Conducting Non-Punch-Through Insulated Gate Bipolar Transistor

作　　者：杨坤进 汪德文 

机构地区：[1]深圳深爱半导体股份有限公司,广东深圳518000

出　　处：《半导体技术》2013年第7期517-520,529,共5页Semiconductor Technology

基　　金：深圳市2012年高新技术产业发展专项

摘　　要：仿真了逆导型(RC)非穿通-绝缘栅双极晶体管(NPT-IGBT)的器件结构及其"折回效应"现象的I-V特性曲线,研究了一些器件重要结构参数(背面阳极n+区域与p+区域尺寸比例Ln/Lp以及n-漂移区厚度)对所仿真的逆导型NPT-IGBT器件电流"折回效应"的影响。用"MOSFET+pin二极管"等效电路模型分析了仿真结果中得到的结论。结果表明,Ln/Lp与n-漂移区厚度对"折回效应"幅度影响显著。在n-漂移区厚度为60μm时,Ln/Lp尺寸比例在5/11和2/14(μm/μm)之间,"折回效应"幅度较低,并且反向二极管具有导通能力,可以成为对应RC-NPT-IGBT的工艺窗口;在n-漂移区厚度达到150μm时,"折回效应"接近消失,Ln/Lp尺寸比例可以有更宽的选择。The device structure and the snap-back phenomenon of I-V characteristic curves of reverse-conducting （RC） non-punch-through （NPT） IGBT were simulated, and the influences of some important device structure parameters （ratio of backside anode n ＋ and p ＋ region Ln/Lp, and n- drift region thickness ） on the snap-back phenomena were studied. ＂MOSFET ＋ pin diode＂ equivalent circuit model was analysised the important results of the simulation. Simulation results show that Ln/Lp ratio and n- drift region thickness have dramatic influence on the ＂ snap-back＂ phenomenon of RC-NPT-IGBT. When the n- drift region thickness is 60 μm, the Ln/Lp ratio between 5/11（μm/μm） and 2/14（μm/μm） can be the process window of the simulated RC-NPT-IGBT, which has low snap-back amplitude and low backward diode voltage drop. When the n- drift region thickness is up to 150 μm, the snap-back amplitude is low enough, and the Ln/Lp ratio can have wider choices.

关 键 词：绝缘栅双极晶体管(IGBT) 非穿通型(NPT) 逆向导通(RC) “折回效应” 电导调制效应 

分 类 号：TN386[电子电信—物理电子学]