Characterization of multilayers and their interlayers： applicationto Co-based systems  

作　　者：P. Jonnard Z.-S. Wang J.-T. Zhu C. Meny J.-M. Andre M.-H. Hu K. Le Guen 

机构地区：[1]Laboratoire de Chimie Physique-Matiere Rayonnement, UPMC Univ Paris 06, CNRS UMR 7614, 11 rue Pierre et Maxie Curie, F-75231 Paris cedex 05, France [2]MOE Key Laboratory of Advanced Micro-Structured Materials, Institute of PrecisionOptical Engineering, Department of Physics, Tongji University, Shanghai 200092, China [3]Institut de Physique et Chimie des Materiaux de Strasbourg,CNRS UMR 7504, 23 rue du Loess, BP 43, F-67034 Strasbourg cedex 2, France

出　　处：《Chinese Optics Letters》2013年第13期137-140,共4页中国光学快报（英文版）

摘　　要：We use complementary analysis techniques to determine the structure of nanometric periodic multilayers and particularly their interfaces. We focus on Co-based multilayer which can be used as efficient optical component in the extreme ultraviolet （EUV） range. The samples are characterized using reflectivity measurements in order to determine the thickness and roughness of the various layers, X-ray emission and nuclear magnetic resonance （NMR） spectroscopies to identify the chemical state of the atoms present within the stack and know if they interdiffuse. Results are validated through the use of destructive techniques such as transmission electron microscopy or secondary ion mass spectrometry.We use complementary analysis techniques to determine the structure of nanometric periodic multilayers and particularly their interfaces. We focus on Co-based multilayer which can be used as efficient optical component in the extreme ultraviolet （EUV） range. The samples are characterized using reflectivity measurements in order to determine the thickness and roughness of the various layers, X-ray emission and nuclear magnetic resonance （NMR） spectroscopies to identify the chemical state of the atoms present within the stack and know if they interdiffuse. Results are validated through the use of destructive techniques such as transmission electron microscopy or secondary ion mass spectrometry.

分 类 号：O434.2[机械工程—光学工程] TB383[理学—光学]