Optical performance, structure and thermal stability of Al（lwt.-%Si）//Zr and Al（pure）//Zr multilayers designed for the 17-19 nm range  

作　　者：钟奇 李文斌 张众 朱京涛 黄秋实 李浩川 王占山 Philippe Jonnard Karine Le Guen Yanyan Yuan Jean-Michel Andre 周红军 霍同林 

机构地区：[1]Department Institute of Precision Optical Engineering, Department of Physics, Tongji University, Shanghai 200092, China [2]Laboratoire de Chimie Physique-Matiere Rayonnement, UPMC Univ. Paris 06, CNRS UMR 7614, 11 rue Pierre et Marie Curie, F-75231 Paris cedex 05, Prance [3]National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China

出　　处：《Chinese Optics Letters》2013年第13期144-147,共4页中国光学快报（英文版）

摘　　要：We report on the optical performance, structure and thermal stability of periodic multilayer films con- taining Zr and Al（lwt.-%Si） or Al（pure） layers designed for the use as extreme ultraviolet （EUV） high reflective mirrors in the range of 1~19 am. The comparison of A1/Zr （Al（lwt.-%Si）/Zr and Al（pure）/Zr） multilayers fabricated by direct-current magnetron sputtering shows that the optical and structural per- formances of two systems have much difference because of Si doped in A1. From the results of grazing incidence X-ray reflection （GIXR）, X-ray diffraction （XRD）, and EUV, the Si can disfavor the crystalliza- tion of AI and smooth the interface, consequently increase the reflectance of EUV in the Al（lwt.-%Si）/Zr systems. For the thermal stability of two systems, the first significant structural changes appear at 250 ~C. The interlayers are transformed from symmetrical to asymmetrical, where the Zr-on-A1 interlayers are thicker than Al-on-Zr interlayers. At 295 ~C for Al（pure）/Zr and 298 ~C for Al（lwt.-%Si）/Zr, the interfaces consist of amorphous Al-Zr alloy transform to polycrystalline Al-Zr alloy which can decrease the surface roughness and smooth the interfaces. Above 300 ~C, the interdiffusion becomes larger, which can enlarge the differences between Zr-on-Al and Al-on-Zr interlayers. Based on the analyses, the Si doped in Al cannot only influence the optical and structural performances of Al/Zr systems, but also impact the reaction temperatures in the annealing process.We report on the optical performance, structure and thermal stability of periodic multilayer films con- taining Zr and Al（lwt.-%Si） or Al（pure） layers designed for the use as extreme ultraviolet （EUV） high reflective mirrors in the range of 1~19 am. The comparison of A1/Zr （Al（lwt.-%Si）/Zr and Al（pure）/Zr） multilayers fabricated by direct-current magnetron sputtering shows that the optical and structural per- formances of two systems have much difference because of Si doped in A1. From the results of grazing incidence X-ray reflection （GIXR）, X-ray diffraction （XRD）, and EUV, the Si can disfavor the crystalliza- tion of AI and smooth the interface, consequently increase the reflectance of EUV in the Al（lwt.-%Si）/Zr systems. For the thermal stability of two systems, the first significant structural changes appear at 250 ~C. The interlayers are transformed from symmetrical to asymmetrical, where the Zr-on-A1 interlayers are thicker than Al-on-Zr interlayers. At 295 ~C for Al（pure）/Zr and 298 ~C for Al（lwt.-%Si）/Zr, the interfaces consist of amorphous Al-Zr alloy transform to polycrystalline Al-Zr alloy which can decrease the surface roughness and smooth the interfaces. Above 300 ~C, the interdiffusion becomes larger, which can enlarge the differences between Zr-on-Al and Al-on-Zr interlayers. Based on the analyses, the Si doped in Al cannot only influence the optical and structural performances of Al/Zr systems, but also impact the reaction temperatures in the annealing process.

分 类 号：O484.41[理学—固体物理] O484.43[理学—物理]