Mechanisms of near-ultraviolet, nanosecond-pulse-laser damage in HfO2/SiO2- based multilayer coatings  

作　　者：S. Papernov 

机构地区：[1]Laboratory for Laser Energetics, University of Rochester, Rochester, NY 14623-1299, USA

出　　处：《Chinese Optics Letters》2013年第13期169-174,共6页中国光学快报（英文版）

摘　　要：The possible role of metal clusters and electronic defects in the near-ultraviolet, nanosecond-pulse-laser damage in HfO2/SiO2-pair - based coatings is analyzed using experimental results on absorption and damage in HfO2 monolayers with and without artificially introduced Hf nanoscale absorbers. These studies reveal a damage mechanism specific to HfO2/SiO2 pair combination comprised of a high-melting-point material （HfO2）, where absorption starts, and a lower-melting-point material （SiO2）, where absorption can be initiated upon reaching the critical temperature. Based on this analysis we discuss possible modifications to coating designs and desirable properties of high- and low-index materials that might lead to improve nanosecond, near-ultraviolet laser-damage performance.The possible role of metal clusters and electronic defects in the near-ultraviolet, nanosecond-pulse-laser damage in HfO2/SiO2-pair - based coatings is analyzed using experimental results on absorption and damage in HfO2 monolayers with and without artificially introduced Hf nanoscale absorbers. These studies reveal a damage mechanism specific to HfO2/SiO2 pair combination comprised of a high-melting-point material （HfO2）, where absorption starts, and a lower-melting-point material （SiO2）, where absorption can be initiated upon reaching the critical temperature. Based on this analysis we discuss possible modifications to coating designs and desirable properties of high- and low-index materials that might lead to improve nanosecond, near-ultraviolet laser-damage performance.

分 类 号：TN244[电子电信—物理电子学] TM836[电气工程—高电压与绝缘技术]