Fabrication and characterization of amorphous ITO/p-Si heterojunction solar cell  

作　　者：HE Bo WANG HongZhi LI YaoGang MA ZhongQuan XU Jing ZHANG QingHong WANG ChunRui XING HuaiZhong ZHAO Lei WANG DunDong 

机构地区：[1]Department of Applied Physics and State Key Laboratory for Modification of Chemical Fibers and Polymer Materials,Donghua University [2]Department of Physics,Shanghai University [3]Instrumental Analysis and Research Center,Shanghai University

出　　处：《Science China(Technological Sciences)》2013年第8期1870-1876,共7页中国科学（技术科学英文版）

基　　金：supported by the State Key Laboratory for Modification of Chemical Fibers and Polymer Materials,Donghua University (Grant No.13M1060102);the Fundamental Research Funds for the Central Universities,China,Donghua University (Grant No. 13D110913);National Natural Science Foundation of China (Grant Nos. 51072034,11174048,51172042);the Cultivation Fund of the Key Scientific and Technical Innovation Project of China (Grant No. 708039);Specialized Research Fund for the Doctoral Program of Higher Education (Grant No. 201100751300-01);Science and Technology Commission of Shanghai Municipality (Grant No. 12nm0503900);the Program for Professor of Special Appointment(Eastern Scholar)at Shanghai Institutions of Higher Learning;the Program of Introducing Talents of Discipline to Universities of China(Grant No. 111-2-04)

摘　　要：Amorphous indium-tin-oxide(a-ITO) film was deposited by radio-frequency(RF) magnetron sputtering at 180°C substrate temperature on the texturized p-Si wafer to fabricate a-ITO/p-Si heterojunction solar cell.The microstructural,optical and electrical properties of the a-ITO film were characterized by XRD,SEM,XPS,UV-VIS spectrophotometer,four-point probe and Hall effect measurement,respectively.The electrical properties of heterojunction were investigated by I-V measurement,which reveals that the heterojunction shows strong rectifying behavior under a dark condition.The ideality factor and the saturation current density of this diode are 2.26 and 1.58×10-4 A cm-2,respectively.And the value of IF/IR(IF and IR stand for forward and reverse currents,respectively) at 1 V is found to be as high as 21.5.For the a-ITO/p-Si heterojunction solar cell,the a-ITO thin film acts not only as an emitter layer,but also as an anti-reflected coating film.The conversion efficiency of the fabricated a-ITO/p-Si heterojunction cell is approximately 1.1%,under 100 mW cm-2 illumination(AM1.5 condition).And the open-circuit voltage(Voc),short-circuit current density(J SC),filll factor(FF) are 280 mV,9.83 mA cm 2 and 39.9%,respectively.Because the ITO film deposited at low temperature is amorphous,it can effectively reduce the interface states between ITO and p-Si.The barrier height and internal electric field,which is near the surface of p-Si,can effectively be enhanced.Thus we can see the great photovoltaic effect.

关 键 词：amorphous indium-tin-oxide（a-ITO） film radio-frequency（RF） magnetron sputtering heterojunction solar cell current-voltage（I-V） characteristics 

分 类 号：TM914.4[电气工程—电力电子与电力传动]