厚膜电阻器短时过负载破坏性试验阻值变化趋势分析  

Resistance Variation Trend Analysis of Short Time Overload Destructive Test of Thick Film Resistor

作　　者：莫雪琼 

机构地区：[1]广东风华高新科技股份有限公司,广东肇庆526020

出　　处：《电子质量》2013年第7期57-61,67,共6页Electronics Quality

摘　　要：该文介绍了厚膜片式电阻器短时过载试验时,按不同幅度施加高于规定的试验电压后,电阻阻值变化的情况。结果表明:电阻在过负载的情况下逐步施加不同倍数的额定电压,电阻值将逐渐变小;当施加的电压继续升高,电流开始向绝缘电阻减小的地方集中,所引起的热量将导致电阻体发生破坏,电阻值上升,直至开路。这对分析及预防电阻器在混合电路中发生阻值异常提供帮助。This paper introduces the resistance variation change trend of thick film chip resistor after short time overload test which is applied voltage higher than specified test voltage in different amplitude,The research showing that the resistance value will gradually become smaller after applying different multiples of rated volt- age in the overload test condition.When the applied voltage continues to rise,the current will concentrate to the part whose insulation resistance began to decrease,and the heat concentrated will damage the resistive body which will cause the resistance value increase,until the resistor open circuit.It is useful for analysis and preven- tion of resistance value anomaly occurred in hybrid circuit.

关 键 词：短时过负载 额定电压 阻值变化率 

分 类 号：TM54[电气工程—电器]