水平定向结晶法生长大尺寸板状蓝宝石缺陷研究  

Study on Defects in Large-Flat Sapphire Crystal Grown by Horizontal Directional Solidification

作　　者：郭怀新[1] 张明福[1] 聂颖[1] 韩杰才[1] 许承海[1] 赵业权[1] 

机构地区：[1]哈尔滨工业大学复合材料与结构研究所,哈尔滨150080

出　　处：《人工晶体学报》2013年第7期1267-1271,共5页Journal of Synthetic Crystals

基　　金：哈尔滨工业大学创新基金(HIT.NSRIF.201158)

摘　　要：采用水平定向结晶法(HDS)成功生长出了质量优异的板状蓝宝石晶体。利用光学显微镜,扫描电镜(SEM),并结合化学腐蚀法对生长出的蓝宝石晶体不同位置的样品进行宏观缺陷及微观位错形貌的观测和研究,分析了水平定向结晶法生长蓝宝石晶体的宏观缺陷类型和位错的形貌,探讨了该缺陷在晶体中的分布规律及其形成原因。实验结果发现晶体的宏观缺陷主要包括气泡和包裹体。并结合能谱(EDS)测试包裹体的成分,分析其形成的原因。结果表明块状或絮状的小尺寸包裹体主要是由于C,Si杂质聚集原料中的其它杂质形成;长条形或圆形的大尺寸包裹体是由于Al,O元素的化学计量比严重适配,造成固液界面局部组分过冷形成。结合化学腐蚀法,发现该晶体的位错形貌均为三角型腐蚀坑,并探讨了晶体中位错的形态。The large-flat sapphire single crystal was successfully grown by horizontal directional solidification （HDS） method. The defects in grown crystal were analyzed by laser scanning confocal microscope, scanning electron microscope and chemical etching method. The macro defect types and the morphology of dislocations were observed and discussed. The distribution and formal reasons of defects were also analyzed. Bubbles and inclusions were regard inclusions were detected by electron probe microanalysi ed as main macro defects. The constituents of s, and formal reasons of inclusions were also investigated. The results indicated that the small inclusions of block and erose shape were formed by concentrated C and Si impurities which gathered other impurities, and the large inclusions of strip and circular shape were due to great mismatch of stoichiometric composition in O and A1 elements. The morphology of dislocations in grown crystal was triangle etch pits analyzed by chemical and the dislocations form were discussed as well. etching method,

关 键 词：蓝宝石 缺陷 位错 水平定向结晶法 

分 类 号：O78[理学—晶体学]