ADP晶体的全方位生长装置  

Study on All-dimension Growth Device of ADP Crystal

作　　者：马江涛[1,2] 滕冰[1,2] 钟德高[1,2] 曹丽凤[1,2] 温吉龙[1,2] 

机构地区：[1]青岛大学物理科学学院,青岛266071 [2]山东省高校光子学材料与技术重点实验室(青岛大学),青岛266071

出　　处：《人工晶体学报》2013年第7期1319-1322,共4页Journal of Synthetic Crystals

基　　金：国家自然科学基金(10979029;11204148;51172111)

摘　　要：本论文研究的全方位生长装置能解决常规的ADP晶体的单向生长问题。在这套装置中,籽晶完全位于溶液中央,籽晶可以首先恢复其理想的结晶学外形。在晶体生长过程中,晶体在各个方向的生长均为自由生长,且育晶器中央的溶液稳定性也明显高于育晶器顶部和底部。这些因素都有利于ADP晶体的优质快速生长。实验所得晶体的质量通过透过率、晶体内缺陷位错密度、高分辨率X射线衍射表征,并将所得结果与常规方法进行了比较。The all-dimension growth device can effectively solve the problem of ADP crystal only growing at one direction. In this device, the point seed will be fixed in the center of solution by the wire, so the point seed can recover its natural crystallographic morphology. During the process growth platinum of crystal , the crystal will grow along each dimension freely, and the stability of solution in the center of growth device is much better than that of both the top and the bottom. These conditions are beneficial for the rapid growth of crystal and improvement of crystal quality. The quality of crystal was evaluated by transmittance, dislocation etching dimension growth technology were pits, high-resolution diffraction curve analysis. The advantages of all- obtained by comparison with conventional growth device.

关 键 词：ADP晶体 全方位生长 理想外形 生长装置 

分 类 号：O78[理学—晶体学]