CdSe纳米晶薄膜的制备与特性研究  

Preparation and Characterization of CdSe Nanocrystalline Films

作　　者：曾体贤[1] 刘其娅[1] 陈太红[1] 谌家军[1] 

机构地区：[1]西华师范大学物理与电子信息学院,南充637009

出　　处：《人工晶体学报》2013年第7期1376-1379,共4页Journal of Synthetic Crystals

基　　金：四川省教育厅重点项目(01ZB089);四川省非金属复合与功能材料重点实验室开放课题(12zxfk15);南充市科技支撑计划(402614)

摘　　要：采用真空热蒸发技术,在光学玻璃基片上生长出排列整齐、高质量的CdSe纳米晶薄膜。通过X射线衍射(XRD)、X射线光电子能谱分析(XPS)、扫描电镜(SEM)、傅里叶红外光谱(IR)等进行表征。结果表明,薄膜结晶性能较好,纳米晶颗粒约为40～70 nm,呈半月状,排列整齐;化学元素配比为49.4∶50.6,稍微富Se;红外透过率高,禁带宽度为1.89 eV,高于块状的CdSe晶体(1.70 eV)。Good quality semiconducting nanocrystalline films of CdSe with regular arrangement and high quality were grown by thermal evaporation on glass substrate.The broad peaks are indexed as（002）,（101）,（102）,（103） and（105） by XRD pattern,which confirmed that CdSe films exist in the hexagonal phase structure and orient with（001） crystalline direction perpendicular to their surface,and the crystallite size was estimated to be in the range 50 nm.SEM images show that the glass substrate is well covered with uniformly distributed lune-like grains and film surface is homogenous without cracks.The strong peaks for Cd and Se were found in the XPS spectrum,and the average atomic percentage ratio of Cd∶ Se was 49.4 ∶ 50.6,which is close to the excellent composition ratio（1 ∶ 1）.The as-deposited sample has high transparency at Mid-infrared region,and the band gap was found to be 1.89 eV,which slightly exceeds the reported value for bulk CdSe（1.70 eV）.The preparation of high quality nanocrystalline thin film is a good foundation for the application of optoelectronic devices for CdSe.

关 键 词：CDSE薄膜 热蒸发 透过率 禁带宽度 

分 类 号：O484[理学—固体物理]