叠层结构对Cu/In预制膜微观结构的影响  

Effect of Different Laminated Construction on Microstructure of Cu/In Precursor

作　　者：陈浩[1,2] 潘勇[1,2] 周兆锋[1,2] 田槟铖[1,2] 李旭军[1,2] 李凯[1,2] 

机构地区：[1]湘潭大学低维材料及其应用技术教育部重点实验室,湘潭411105 [2]湘潭大学材料与光电物理学院,湘潭411105

出　　处：《材料导报》2013年第16期63-66,共4页Materials Reports

基　　金：国家自然科学基金(11002121);教育部博士点基金(20104301120005)

摘　　要：采用超声波-脉冲直流电沉积的方法在钼基底上制备了两种不同叠层结构的Cu/In预制膜:Cu/In多层膜和Cu/In双层膜,经过随后的热处理得到了Cu/In合金膜。通过XRD、SEM等对比研究了这两种Cu/In预制膜热处理前后的表面形貌、成分和相结构特征。结果表明:采用Cu/In多层膜制备的Cu/In合金膜表面更致密、平滑,成分分布更均匀,所用的热处理时间短且显著减少了In元素的挥发损失,更利于薄膜原子比的精确控制。Two different laminated films, Cu/In multilayer films and Cu/In double layer films were prepared by pulse jet-electrodeposition with continuous ultrasonic wave. The Cu/In alloy precursors were subsequently synthesized by means of heat treatment. Phase formation, microstructure and composition of the two films were compared and studied. The results show that compared with the Cu/In double layer films, the Cu/In multilayer films presented bet- ter surface morphology and required less annealing time, and significantly reduced the volatilization loss of the In ele- ment, which is more favorable for making stoichiometric Cu/In precursor.

关 键 词：电沉积 叠层结构 CU In预制膜 热处理 

分 类 号：O484.1[理学—固体物理] TM914.42[理学—物理]