钼屏发射率对泡生法蓝宝石单晶生长影响的数值模拟研究  

Numerical Simulation Research on Influence of Emissivity of Molybdenum Shield on Sapphire Growth by Kyropoulos Method

作　　者：韩江山[1] 左然[1] 苏文佳[1] 季尚司[1] 

机构地区：[1]江苏大学能源与动力工程学院,镇江212013

出　　处：《材料导报》2013年第16期143-145,150,共4页Materials Reports

基　　金：国家自然科学基金青年基金(51206069);江苏省自然科学基金青年基金(BK2012295);高等学校博士学科专项科研基金(20123227120017);江苏大学高级专业人才科研启动基金(1281130015)

摘　　要：泡生法蓝宝石单晶生长过程中,由于生长周期长、温度高,热场中钼屏的物理性质和形状都会发生变化,从而引起炉内温场的变化。通过计算机数值模拟,研究了钼屏发射率发生变化时,泡生法蓝宝石单晶生长中温场、流场的变化。模拟结果表明:随钼屏发射率增加,消耗功率也不断增加;在放肩阶段熔体等温线向下移动,流场也从2个涡流逐渐变成1个涡流;而在等径阶段和收尾阶段,这些变化都不明显。Due to long growth period and high temperature of sapphire growth process used kyropoulos me- thod, the physical nature and shape of molybdenum in the thermal field will be changed , which cause the change of the temperature field in the furnace. A computer numerical simulation was carried out. As the molybdenum screen emis- sivity changed, the change of temperature field and flow field were researched. The simulation results show that, the power consumption increased with the increase of molybdenum-screen emissivity. In the shouldering stage melt iso- therm moved downward gradually and two vortexes became one vorte^c During equal stage and ending stage, these changes were not obvious.

关 键 词：泡生法 蓝宝石 数值模拟 发射率 

分 类 号：O782[理学—晶体学]