采用IFVD-QWI技术制备电吸收调制DFB激光器  

Electroabsorption modulated DFB lasers fabricated by IFVD-QWI technology

作　　者：张灿[1] 朱洪亮[1] 梁松[1] 韩良顺[1] 黄永光[1] 王宝军[1] 王圩[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《光电子．激光》2013年第8期1451-1455,共5页Journal of Optoelectronics·Laser

基　　金：国家"863"计划(2011AA010303;2012AA012203);国家自然科学基金(61021003;61090392);国家"973"计划(2011CB301702)资助项目

摘　　要：采用等离子体增强化学气相沉积(PECVD)法在InGaAsP多量子阱/InP缓冲层/InGaAs层上沉积SiO2薄膜,通过N2气氛下快速热退火(RTA)方法实现无杂质空位扩散(IFVD)的量子阱混杂(QWI)。对不同退火温度下量子阱增益峰值波长的蓝移特性进行了实验摸索,在780℃@80s的退火条件下,可以获得最大72.8nm的相对波长蓝移量,并且发现快速热退火RTA温度低于780℃以下时,LD区的波长蓝移量随温度变化基本能控制在10nm以内。通过选取合适退火条件实现了光荧光(PL)峰值波长约50nm的蓝移量,在选区制备出合适带隙波长材料的基础上,在LD区制作全息光栅并二次外延P型掺杂电接触层后,采用标准化浅脊波导电吸收调制(EAM)分布反馈激光器(EML)工艺制备了1.5μm波长的EML管芯,器件阈值为20mA,出光功率达到2mW@90mA,静态消光比在+6V反偏压下为9.5dB。The SiO2 dielectric films are grown on the structure of InGaAsP-MQW/InP-buffer layer/In- GaAs by plasma enhanced chemical vapor deposition （PECVD）. Then, quantum well intermixing （QWI） is realized by the impurity-free vacancy diffusion （IFVD） technology after rapid thermal annealing （RTA） at N2 atmosphere. The characteristics of RTA for blue-shift of photoluminescence （PL） gain peak wavelength at different temperatures are experimentally explored. A largest relative blue-shift of 72. 8 nm is realized with the RTA temperature of 780 ~C and RTA time of 80 s. It is also found that the blue-shift of LD region could be controlled within 10 nm. A 50 nm blue-shift of PL wavelength is ob- tained,which satisfies the band energy gap for the electroabsorption modulated DFB laser （EML） de- vice. After formation of holographic grating on the laser region and the second epitaxy of P-doped contact layers, the EML device is fabricated by the standardization shallow ridge-waveguide process. The device lasing at 1.5/~m with 20 mA threshold current and 30 dB side mode suppression ratio （SMSR） is ob- tained. The output power of the EML device is 2 mW at an injecting current of 90 mA,and the static extinction ratio is 9.5 dB when the bias voltage on the modulator is -6 V.

关 键 词：无杂质空位扩散(IFVD 量子阱混杂(QWI) 电吸收调制(EAM)分布反馈(DBF)激光器 (EML) 

分 类 号：TN256[电子电信—物理电子学]