单晶硅片中的位错在快速热处理过程中的滑移  

Dislocation motion during rapid thermal processing of single-crystalline silicon wafers

作　　者：徐嶺茂 高超[1] 董鹏[1] 赵建江[1] 马向阳[1] 杨德仁[1] 

机构地区：[1]浙江大学材料科学与工程系,硅材料国家重点实验室,杭州310027

出　　处：《物理学报》2013年第16期411-415,共5页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:50832006);国家科技重大专项(批准号:2010ZX02301-003);浙江省创新团队(批准号:2009R50005);浙江省自然科学基金(批准号:R4090055)资助的课题~~

摘　　要：研究了单晶硅片中维氏压痕诱生的位错在不同气氛下高温快速热处理中的滑移行为.研究表明:在快速热处理时,位错在压痕残余应力的弛豫过程中能发生快速滑移;当快速热处理温度高于1100℃时,在氮气氛下处理的硅片比在氩气氛下处理的硅片有更小的位错滑移距离.我们认为这是由于氮气氛下的高温快速热处理在压痕处注入的氮原子钉扎了位错,增加了位错的临界滑移应力,从而在相当程度上抑制了位错的滑移.可以推断氮气氛下的高温快速热处理注入的氮原子增强了硅片的机械强度.We have investigated the motion of dislocations originating from Vicker indentations in single-crystalline silicon wafers subjected to high temperature rapid thermal processing （RTP） under different ambients. It is found that the dislocations move very rapidly due to the release of residual stress around the indentations during the RTP. Moreover, as the RTP temperature exceeds 1100℃, the dislocation gliding distances in the specimens subjected to the RTP in N2 atmosphere are much shorter than in Ar ambient. We believe that the nitrogen atoms injected into the indentation by the RTP under N2 ambient exhibit a pinning effect on dislocation motion. It is thus shown that the high temperature RTP in N2 ambient can improve the mechanical strength of silicon wafer.

关 键 词：快速热处理 位错滑移 机械性能 单晶硅 

分 类 号：TN304.12[电子电信—物理电子学]