标准Ge-on-SOI工艺全差分光电探测器(本期优秀论文)  

Fully differential photodetector based on standard Ge-on-SOI process

作　　者：康玉琢[1] 毛陆虹[1] 张世林[1] 谢生[1] 

机构地区：[1]天津大学,天津300072

出　　处：《光通信技术》2013年第8期1-4,共4页Optical Communication Technology

摘　　要：基于IME标准Ge-on-SOI工艺提出了一种全差分光电探测器结构,由定向耦合偏振分束器与锗垂直PIN光电探测器组成,可将一路由单模光纤输入的高速1550nm光信号转换为一对高速差分电信号。分析并设计了具体结构,进行了器件模拟,模拟得到定向耦合偏振分束器TE波与TM波的消光比分别为-16.7dB与-15.7dB,锗垂直PIN光电的响应度与带宽分别为0.42A/W与6.51GHz。A novel fully differential photodetector based on standard Ge-on-SOI process is put forward. This photodetector consists of direction coupling polarization splitter and two vertical PIN Germanium photodetec- tor, which can convert one high speed 1550nm input optical signal to a pair of balanced high speed electrical output signal. The splitter and photodetector are analyzed and simulated. The extinction ratios of splitter are -16.7dB for TE and -15.7dB for TM. The responsivity and bandwidth are 0.42A/W and 6.51GHz respectively.

关 键 词：定向耦合器 偏振分束器 锗光电探测器 全差分 光束传播法 Ge-on-SOI 

分 类 号：TN491[电子电信—微电子学与固体电子学]