微立方结构基底上生长碳纳米管薄膜的强流脉冲发射特性  

Intense pulsed emission characteristics of CNTs grown on the surface of micro-cube array

作　　者：麻华丽[1] 张新月[1] 霍海波[1] 曾凡光[1] 王淦平[2] 向飞[2] 

机构地区：[1]郑州航空工业管理学院数理系,河南郑州450015 [2]中国工程物理研究院应用电子学研究所,高功率微波技术重点实验室,四川绵阳621900

出　　处：《功能材料》2013年第16期2406-2408,2415,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(51072184;50972132;51002143;61274012;61172041);航空科学基金资助项目(2011ZF55015);河南省基础与前沿技术研究计划资助项目(112300410264);河南省高等学校青年骨干教师资助计划资助项目(2011GGJS-140)

摘　　要：采用酞氰铁高温热解方法在具有微立方结构的化学镀镍硅基底上生长了碳纳米管薄膜(Si/Ni-CNTs),并在20GW脉冲功率源系统中采用二极结构对其强流脉冲发射特性进行了研究。研究结果表明,在单脉冲发射条件下,随脉冲电场峰值的增大,Si/Ni-CNTs薄膜的发射电流峰值呈线性增加,当宏观场强达到31.4 V/μm时,发射脉冲电流的峰值可达到14.74kA,对应的发射电流密度1.23kA/cm2,在相同峰值,连续多脉冲情况下,碳纳米管薄膜具有良好的发射可重复性,且发射性能稳定。Carbon nanotube films were synthesized on the surface of micro-cube array Si with electroless plated Ni layer（Si/Ni-CNTs） by pyrolysis of iron phthalocyanine （FePc）. Intense pulsed field emission of CNTs was researched with diode structure on 20GW pulse power system. For single pulse emission,emission current peak of Ni/Si-CNTs linearly increases with pulse field peak; at the applied peak electric field of about 31.4V/μm, peak current and current density can achieve about 14.74kA and about 1.23kA/cm2 , emission current ability of CNTs was obviously better than that of report. For many continuous and same peak pulses emission, Si/Ni- CNTs are provided with good repeatability of pulsed emission,and present better emission stabi]itv

关 键 词：强流脉冲发射 碳纳米管 微立方阵列 线性增加 稳定性 

分 类 号：TB383.1[一般工业技术—材料科学与工程]