磁集成器件界面扩散及钝化影响  

Interface Diffusion and Passivation Effect of Integrated Magnetic Devices

作　　者：祝传刚[1] 丁义峰[1] 徐发强[2] 

机构地区：[1]海军潜艇学院航海观通系,山东青岛266071 [2]中国科学技术大学国家同步辐射实验室,合肥230029

出　　处：《科技导报》2013年第25期22-25,共4页Science & Technology Review

基　　金：国家自然科学基金项目(19574042)

摘　　要：为了解决铁与砷化镓界面形成过程中,存在砷原子向金属层中扩散的现象,导致界面磁性减弱影响该结构的物理性能问题,采用钝化工艺改善界面磁性的方法,利用电子能谱技术测量了界面形成过程中铁与砷化镓界面的价带谱和砷原子的3d芯能级谱,从电子能谱的角度得到了砷原子扩散的相关数据。通过对比清洁界面和钝化界面的实验结果,证明了钝化可以减弱砷原子的界面扩散,铁原子3d能级的磁性交换劈裂也得到加强,价带峰被展宽,界面的磁性得到改善。依据价带谱的展宽现象和相关的研究报导表明:将硫钝化界面技术应用于磁集成器件制造工艺是有益的。Diffusion of arsenic atoms affects the quality of interface magnetic integrated device and the physical properties of the structure. A method was put forward to improve the interface magnetism by passivation process. The valence band spectrum and core level spectrum were measured by synchrotron radiation photoemission. Experimental results confirm interface diffusion of As atoms. The result was compared with that from Fe/GaAs without passivation and it is confirmed that passivation has attenuated diffusion of arsenic atoms; Fe 3d band is expanded by exchange-splitting interaction, showing the Fe film in good magnetic order and the magnetism of Fe film has been enhanced. According to the large exchange splitting in valence band spectra and the related results, it can be concluded that passivation technology can be used to improve the quality of integrated magnetic devices.

关 键 词：界面 钝化 磁性薄膜 

分 类 号：TN406[电子电信—微电子学与固体电子学]