退火对Cd_(1-x)Zn_xTe薄膜性质的影响  

Influence of annealing on the properties of Cd_(1-x)Zn_xTe thin films

作　　者：江洪超[1] 金硕[1] 武莉莉[1] 张静全[1] 李卫[1] 黎兵[1] 曾广根[1] 王文武[1] 

机构地区：[1]四川大学材料科学与工程学院,成都610064

出　　处：《四川大学学报（自然科学版）》2013年第4期842-848,共7页Journal of Sichuan University(Natural Science Edition)

基　　金：国家"973"计划资助项目(2011CBA00708)

摘　　要：本文用双源真空蒸发的方法制备了Cd1-xZnxTe薄膜,通过热探针、SEM、XRD及紫外-可见光透过谱等方法研究了不同退火条件对薄膜性质的影响.退火后Cd1-xZnxTe多晶薄膜的光学禁带宽度在1.54eV～1.68eV之间,且沿立方相(111)面择优生长.退火温度主要影响薄膜表面的粗糙度和平均晶粒尺寸,退火时间主要影响薄膜的平均晶粒尺寸.退火温度与时间对薄膜电学性质的影响较小.The Cd1-xZnxTe thin films were deposited with vacuum co-evaporation deposition technique using two sources. The influence of annealing with different conditions on the properties of the films was studied by thermal probe,SEM,XRD and Ultraviolet-visible spectrometer. The polycrystalline films of Cd1-xZnxTe with the （111） preferred orientation were obtained and the value of the optical band gap varies between 1.54eV and 1.68eV. The roughness of the films is influenced by the annealing temperatures and the average grain size of the films is influenced both by temperature and time. The electrical property of the films is little influenced by annealing temperature and time.

关 键 词：Cd1-xZnxTe薄膜 退火 性质 

分 类 号：TB332[一般工业技术—材料科学与工程]