半导体量子线场效应管研究现状及趋势  

Status and development trend of semiconductor quantum-wires field-effective transistors

作　　者：闫发旺[1] 张文俊[1] 张荣桂[1] 

机构地区：[1]电子十三所,河北 石家庄 050051

出　　处：《半导体情报》2000年第6期25-28,共4页Semiconductor Information

摘　　要：综述了 - 族化合物半导体量子线场效应管的研究进展情况 ,阐述了量子线结构场效应管的制作工艺原理、制备方法、材料结构及器件的电学性能。指出了当前存在的工艺困难 ,并展望了进一步的发展趋势。The lately development of Ⅲ-Ⅴ compound semiconductor quantum-wires field-effective transistors(QWRs-FET)is presented in this paper.The technique principles,fabrication methods,material structure as well as the electronic characteristics of the device are described.The difficulties involving fabrication technique are discussed.

关 键 词：量子线场效应管 平面栅场效应管 半导体场效应管 

分 类 号：TN386[电子电信—物理电子学]