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作 者:王丽[1] 郭诗玫[1] 周应强[1] 朱志军[1] 周铖[2] 刘国涛[2]
机构地区:[1]曲靖师范学院物理与电子工程学院,云南曲靖655011 [2]昆明理工大学云南省新材料制备与加工重点实验室,云南昆明650093
出 处:《云南冶金》2013年第4期46-49,63,共5页Yunnan Metallurgy
基 金:曲靖师范学院实验教学研究项目(syjx2011003)
摘 要:采用磁控共溅射方法分别制备了含有W和Mo两种不同成分的铜系薄膜,用EDX、XRD、SEM和纳米压痕仪对薄膜成份、结构、形貌和显微硬度进行了分析。结果表明,制备出的Cu-W和Cu-Mo薄膜均呈晶态结构,Cu-W和Cu-Mo形成了均匀的固溶体;经650℃热处理1 h后,Cu-W和Cu-Mo薄膜中晶粒长大,有富W和富Mo相从基体Cu相中弥散析出;Cu-W薄膜的显微硬度随W成分的增加先增加后降低;Cu-Mo薄膜的显微硬度随Mo成分的增加而持续升高,薄膜退火态的显微硬度低于沉积态。分析认为,以上结果的产生均因添加W、Mo所引起的晶粒细化效应和薄膜的热稳定性较差所致。The two kinds of copper thin films with W or Mo are prepared by magnetron co - sputtering method, the composition, structure, morphology and microhardness of thin films is analyzed by EDX, XRD, SEM and nanometer indentation testers. The results show that the prepared Cu-W and Cu-Mo thin film all present crystalline state structure, Cu-W and Cu-Mo forms uniform solid solution; the grains in Cu-W and Cu-Mo thin film grow up after the heat treatment for one hour at 650~C , there is enriched W and Mo phase precipitated dispersively from the host Cu phase; the microhardness of Cu-W thin film is increased and then decreased along with the increasing of W; the microhardness of Cu-Mo thin fihn constantly rise along with the increasing of Mo, the microhardness of annealed thin film is lower than as-deposited thin film. The analysis show that the reasons for the above results are caused by addition of W, Mo, which leads to grain refine- ment effect and poor thermal stability of the thin fihn.
分 类 号:TG113.12[金属学及工艺—物理冶金]
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