高电子迁移率晶体管材料结构的制备及分析  

Preparation and analysis of HEMT materials structure

作　　者：王雪敏[1,2] 阎大伟[1,2] 沈昌乐[1,2] 赵妍[1,2] 黎维华[1,2] 周民杰[1,2] 罗跃川[1,2] 彭丽萍[1,2] 吴卫东[1,2] 唐永建[1,2] 

机构地区：[1]中国工程物理研究院激光聚变研究中心,四川绵阳621999 [2]中国工程物理研究院太赫兹研究中心,四川绵阳621999

出　　处：《太赫兹科学与电子信息学报》2013年第4期536-540,共5页Journal of Terahertz Science and Electronic Information Technology

摘　　要：针对高电子迁移率晶体管(HEMT)器件,分析了双δ掺杂GaAs HEMT的结构组成,基于固源分子束外延方法制备了双δ掺杂GaAs HEMT的缓冲层、沟道层、平面掺杂层和隔离层等多层材料结构。采用X-ray射线衍射、透射电镜研究了多层材料的结构。范德堡霍尔测试结果表明,HEMT的2DEG测试浓度为1.82×1012cm-3,电子迁移率大于6 520 cm2·V-1·s-1。The study of High Electron Mobility Transistor（HEMT） devices is very important in many fiehls and is also of great significance for promoting the application of terahertz. In this paper, the slruclure of a double 8-doped GaAs HEMT has been analyzed. Multi-layer structure of a double 8-doped GaAs HEMT, which contains the buffer layer, the channel layer, the planar doped layer, the isolation layer and so on, is prepared by molecular beam epitaxy. The muhi-layer structure has been studied using X-ray diffraclion and transmission electron microscopy. Results of the Hall measurement indicate that the sheet density and mobility of 2DEG are 1.82 × 10^12 cm 3 and above 6 520 cm2· V ·-s-1, respectively.

关 键 词：高电子迁移率晶体管 多层结构 双δ掺杂 

分 类 号：TN304.07[电子电信—物理电子学]